Gallium Nitride FET Model

G. I. Zebrev,V. V. Orlov,G.I. Zebrev,V.V. Orlov

DOI: https://doi.org/10.48550/arXiv.1909.05702

2019-09-12

Applied Physics

Abstract:We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.

What problem does this paper attempt to address?

Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact Model

Zarak Bhat,Aamir Ahsan,Sheikh Aamir Ahsan

DOI: https://doi.org/10.1109/ted.2023.3347375

IF: 3.1

2024-03-06

IEEE Transactions on Electron Devices

Abstract:In response to the recent surge of interest in p-channel GaN devices for the development of GaN complementary technology integrated circuits (ICs), a comprehensive model is essential for expediting device design. This article introduces an analytical model for understanding the current–voltage ( – ) characteristics of GaN p-channel FETs (p-FETs). The model is rooted in physics-based expressions of electrostatics, self-consistently solving Schrödinger–Poisson equations, and incorporating Fermi–Dirac statistics, alongside 2-D density of states (2D-DOS) for the 2-D hole gas (2DHG). It further uses drift–diffusion mechanisms to account for hole transport and is validated against experimental data encompassing both enhancement-mode and depletion-mode GaN p-FETs. We further leverage our developed physics-based model to thoroughly analyze the device performance and various device characteristics, including the threshold voltage, in relation to device dimensions and the doping levels within the p-GaN region. This aspect of our model is particularly valuable as it facilitates device optimization. Consequently, process engineers in foundries can use our model to enhance their manufacturing processes when developing p-channel GaN FETs.

engineering, electrical & electronic,physics, applied
An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

Ning Zhang,Zhao Lin,Liang Hong,Yunyu Tang,Hao Ma

DOI: https://doi.org/10.1109/isie.2015.7281474

2015-01-01

Abstract:In this paper, an improved analytical model suitable for a high voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode configuration is presented to analyze operating condition and calculate the energy losses during turn-on transition. Aiming to guarantee the superior precision of the model, all the parasitic inductors and capacitors are taken into consideration during the turn-on transition. The turn-on process is divided into five stages. By means of precise circuit equality and analysis, the frequency domain and time domain expressions of voltage and current in different working stages are illustrated in detail. Moreover, the energy losses could be further calculated accordingly. The accuracy of the proposed model is validated by experimental results whatever current and gate resistor change.
Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Jin Zhang

2005-01-01

Abstract:Based on the charge control theory,an accurate analytical model for the dc I V characteristics and small signal parameters of an AlGaN/GaN high electron mobility transistor(HEMT) is developed considering the effects of polarization and parasitic source drain resistances.Results show that the joint effects of spontaneous and piezoelectric polarization on the performance of the device are highly dominant.The proposed model predicts a maximum saturation current of 1370mA/mm at a gate bias of 2V for a 1.0μm Al 0.2 Ga 0.8 N/GaN HEMT.The calculated results also indicate that higher saturation current,transconductance,and cutoff frequency can be achieved by lowering the parasitic resistances.The comparison between simulations and physical measurements shows a good agreement.The model is simple in calculations and distinct in physical mechanism,therefore suitable for design and research of microwave device and circuit.
A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

Zhihao Lv,Zhiwei Xu,Ruirui Dang,Chunyi Song,Xiaopeng Yu

DOI: https://doi.org/10.1109/lmwc.2021.3128425

IF: 3

2022-01-01

IEEE Microwave and Wireless Components Letters

Abstract:A compact gate-width scalable model of dual-gate gallium arsenide pseudo high electron mobility transistors (GaAs pHEMTs) is proposed. We derive the model based on analytical formulation and represent it with a simplified circuit containing only eight elements. Compared with the dual-gate model using two separate devices, this modeling method is much simpler in characterization and can extract intrinsic parameters directly from two-port measurements. Extrinsic parameters are extracted by de-embedding method evolved from the conventional open-short method. Devices with different gate widths and numbers of finger are modeled to verify the scaling effect. The simulated results based on the proposed model agree with the measured results well up to 40 GHz for 0.25 mu m GaAs pHEMT devices. In addition, a large-signal model is built based on the proposed dual-gate model. A 2 GHz power amplifier was realized to illustrate the suitability of the proposed model for circuit design.
Monolithically Integrated GaN Power ICs Designed Using the MIT Virtual Source GaNFET (MVSG) Compact Model for Enhancement-Mode P-Gan Gate Power HEMTs, Logic Transistors and Resistors

S. You,X. Li,S. Decoutere,G. Groeseneken,Z. Chen,J. Liu,Y. Yamashita,K. Kobayashi

DOI: https://doi.org/10.1109/essderc.2019.8901817

2019-01-01

Abstract:This paper presents the models for several components needed for GaN IC design. MIT virtual source GaNFET (MVSG) model works very well in modelling the high-voltage p-GaN gate power HEMTs and low-voltage GaN logic transistors. The 2DEG resistor can be modelled either using MVSG model or empirical spice model. Low ohmic resistance can be simply modelled with empirical equation. Circuit simulations and measurements demonstrate the convergence and accuracy of the models.
A compact Non-Quasi-Static small-signal model for GaN HEMT

Behnam Jafari Touchaei,Majid Shalchian

DOI: https://doi.org/10.1016/j.mejo.2024.106199

IF: 1.992

2024-04-14

Microelectronics Journal

Abstract:In this work, we introduce a compact Non-Quasi-Static (NQS) model for the long-channel Gallium nitride high-mobility field effect transistor based on charge-based EPFL (École Polytechnique fédérale de Lausanne) HEMT model implemented in Verilog-AMS modeling language. The proposed model has been validated for the low-frequency (quasi-static) operating region as well as high frequencies up to sub-terahertz. This model has been derived from the analytical solution of the drift-diffusion and continuity equations based on physically valid assumptions. Polynomial approximation was used to make the model design-oriented and compatible with conventional circuit simulators for designing microwave circuits. Intrinsic trans-admittance parameters, obtained from the model for two devices with channel lengths of 1μm and 10μm has been validated with TCAD simulation results. Besides, the scattering parameters for the GaN HEMT equivalent circuit, have been validated with TCAD simulations and with our previous work, which already validated with experimental data. These results confirm the effectiveness of the proposed compact model for circuit simulations.

engineering, electrical & electronic,nanoscience & nanotechnology
A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate

Jinye Wang,Jun Liu,Zhenxin Zhao

DOI: https://doi.org/10.1088/1674-4926/45/5/052302

2024-05-24

Journal of Semiconductors

Abstract:An accurate and novel small-signal equivalent circuit model for GaN high-electron-mobility transistors (HEMTs) is proposed, which considers a dual-field-plate (FP) made up of a gate-FP and a source-FP. The equivalent circuit of the overall model is composed of parasitic elements, intrinsic transistors, gate-FP, and source-FP networks. The equivalent circuit of the gate-FP is identical to that of the intrinsic transistor. In order to simplify the complexity of the model, a series combination of a resistor and a capacitor is employed to represent the source-FP. The analytical extraction procedure of the model parameters is presented based on the proposed equivalent circuit. The verification is carried out on a 4 × 250 μm GaN HEMT device with a gate-FP and a source-FP in a 0.45 μm technology. Compared with the classic model, the proposed novel small-signal model shows closer agreement with measured S-parameters in the range of 1.0 to 18.0 GHz.

physics, condensed matter
An On-State Analytical Model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

F UDREA,GAJ AMARATUNGA

DOI: https://doi.org/10.1016/s0038-1101(97)00034-8

1995-01-01

Abstract:A specific, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode-PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier distribution in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. The physics of the Trench IGBT based on a parallel and coupled PIN diode-PNP transistor action is accurately described using numerical simulations and analytical modeling. An optimised Trench IGBT with an enhanced PIN diode effect has substantially improved on-state characteristics and is potentially the most attractive device in the area of high voltage fast switching devices.
Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review

Enrico Bottaro,Santi Agatino Rizzo,Nunzio Salerno

DOI: https://doi.org/10.3390/en15093415

IF: 3.2

2022-05-08

Energies

Abstract:Gallium nitride high-electron-mobility transistor (GaN HEMT) is a key enabling technology for obtaining high-efficient and compact power electronic systems. At the design stage of a power converter, the proper modelling of the GaN HEMT is essential to benefit from their good features and to account for the limits of the current technology. Circuit models of power MOSFETs have been deeply investigated by academia and industry for a long time. These models are able to emulate the datasheet information, and they are usually provided by device manufacturers as netlists that can be simulated in any kind of SPICE-like software. This paper firstly highlights the similarities and differences between MOSFETs and GaN HEMTs at the datasheet level. According to this analysis, the features of MOSFET circuit models that can be adopted for GaN HEMT modelling are discussed. This task has been accomplished by overviewing the literature on MOSFETs circuit models as well as analysing manufacturers netlists, thus highlighting the models MOSFETs valid or adaptable to GaN HEMTs. The study has revealed show that some models can be adapted for the GaN HEMT devices to emulate static characteristics at room temperature while the MOSFET models of dynamic characteristics can be used for GaN HEMT devices. This study enables the devices modellers to speed up the GaN HEMT modelling thanks to the use of some well-established MOSFET models. In this perspective, some suggestions to develop accurate GaN HEMT models are also provided.

energy & fuels
Analytical Model for High Current Density Trench Gate Mosfet

KGP Dharmawardana,GAJ Amaratunga

DOI: https://doi.org/10.1109/ispsd.1998.702712

1998-01-01

Abstract:An analytical model for the trench gate MOSFET is presented. It consists of a more accurate model for the inversion channel region, which considers the effects of doping variation, transverse and longitudinal electric fields on electron mobility. In addition, it also accurately incorporates the feature of current transfer from the accumulation channel region into the n-drift region. The model presented and validated by numerical simulation results can be useful in the initial design of optimum device structures
Model the AlGaN/GaN high electron mobility transistors

Yan, Wang,Xiaoxu Cheng,Xiaojian Li

2012-01-01

Abstract:In this paper, we introduce a full set of surface potential based analytical compact core model for Al-GaN/GaN HEMTs which includes I-V characteristics, C-V characteristics, gate leakage, high frequency noise characteristics and self-heating effect. The core model is embedded in an equivalent circuit that contains several parasitic elements. The model is validated against both numerical simulations and device measurements. This model has several advantages compared with other reported results: (1) The surface potential equation provides an accurate description of the subthreshold channel charge density. (2) The model is symmetric, and has a consistent current and charge equation. (3) The model is complete and systematic.
Physics-Based Compact Model for AlGaN/GaN MODFETs with Close-Formed $I$ – $V$ and $C$ – $V$ Characteristics

Xiaoxu Cheng,Miao Li,Yan Wang

DOI: https://doi.org/10.1109/ted.2009.2030722

IF: 3.1

2009-01-01

IEEE Transactions on Electron Devices

Abstract:A set of explicit analytical solutions to the charge concentration, current, and capacitance characteristics of AlGaN/GaN MODFETs in different working regions is developed. First, a unified charge control expression applicable to both subthreshold regions and strong inversion regions is determined, while the parasitic channel effect in AlGaN layer is also taken into account. The onset voltage for this parasitic channel is estimated for the first time. Based on the improved charge control model, the current (I ds), the transconductance (gm), and the output conductance (gd) are given explicitly and are applicable in a wide bias range. Moreover, the gate-to-source capacitance (C gs ) and gate-to-drain capacitance (C gd) have been obtained analytically under various applied biases, and, consequently, the cutoff frequency can be predicted. The present model shows good agreement with the experimental data and is useful for microwave circuit design and analysis.
Simplified EPFL GaN HEMT Model

Farzan Jazaeri,Majid Shalchian,Ashkhen Yesayan,Amin Rassekh,Anurag Mangla,Bertrand Parvais,Jean-Michel Sallese

2024-09-05

Abstract:This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying on these figures, insights into GaN HEMT modeling in relation to technology offers a comprehensive understanding of the device behavior. Validation is achieved through measured transfer characteristics of GaN HEMTs fabricated at IMEC on a broad range of biases. This simplified approach should enable a simple and effective circuit design methodology with AlGaN/GaN HEMT heterostructures.

Applied Physics
A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs

Zarak Bhat,Aamir Ahsan,Sheikh Aamir Ahsan

DOI: https://doi.org/10.1109/ted.2024.3356432

IF: 3.1

2024-03-06

IEEE Transactions on Electron Devices

Abstract:In this article, we introduce a physics-based model aimed at elucidating the conduction mechanisms responsible for gate leakage in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs). Our model hinges on the analysis of potential variations at each interface within the p-GaN/AlGaN/GaN HEMT gate-stack. This analysis is achieved by self-consistently solving the Schrödinger-Poisson equations. To address the electrostatics at the interface, we leverage the Fermi-Dirac (FD) distribution and the 2-D-density of states. Additionally, we develop bias-dependent region-wise models, including thermionic emission (TE), thermally assisted tunneling, and Poole-Frenkel (PF) emission, to account for leakage current. To ascertain the validity of our model, we conduct a comprehensive validation against TCAD simulations and experimental data from a p-GaN HEMT, spanning a wide range of temperatures. The model through its physics-based nature has the potential to serve as a quick aid to the otherwise time-consuming TCAD simulations, in pursuit of developing enhancement mode (e-mode) GaN devices.

engineering, electrical & electronic,physics, applied
Analytical Models for Gan-Based Heterostructure-Free Normally off Fin-Shaped Field-Effect Transistor

Guangxi Hu,Haisheng Qiang,Shuyan Hu,Ran Liu,Lirong Zheng,Xing Zhou

DOI: https://doi.org/10.7567/jjap.56.021002

IF: 1.5

2017-01-01

Japanese Journal of Applied Physics

Abstract:Analytical models for threshold voltage and subthreshold swing of GaN-based fin-shaped field-effect transistors (FinFETs) are obtained. Analytical expressions for the drain-induced barrier lowering effect and threshold voltage roll-off effect are presented. The explicit expressions for threshold voltage and subthreshold swing make the model suitable for being embedded in circuit simulations and design tools. (c) 2017 The Japan Society of Applied Physics
A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

M. Ťapajna,J. Kuzmík

DOI: https://doi.org/10.1063/1.3694768

IF: 4

2012-03-12

Applied Physics Letters

Abstract:An analytical model for threshold voltage calculation for metal-oxide-semiconductor GaN based high electron mobility transistors is proposed. This model includes polarization induced charges at each heterostructure interface/surface, surface donors, oxide/barrier interface traps charge, and interfacial and bulk fixed oxide charge. Applicability of the model is demonstrated on GaN/AlGaN/GaN MOS heterostructure capacitors with Al2O3 and HfO2 gate dielectrics grown by atomic layer deposition with different barrier surface treatment and Al2O3 thicknesse.

physics, applied
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Jie Wang,Zhanfei Chen,Shuzhen You,Benoit Bakeroot,Jun Liu,Stefaan Decoutere

DOI: https://doi.org/10.3390/mi12020199

IF: 3.4

2021-02-15

Micromachines

Abstract:We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I–V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

aixi zhang,lining zhang,zhikai tang,xiaoxu cheng,yan wang,k j chen,mansun chan

DOI: https://doi.org/10.1109/TED.2014.2298255

2014-01-01

Abstract:In this paper, a surface potential-based terminal charge and capacitance model, including parasitic components for AlGaN/GaN HEMTs is developed. First, by solving the charge control equations, the sheet charge density in the channel is modeled with a close-form expression. Then, using this result, based on the surface potential definition, the intrinsic terminal charges and capacitances are derived consistently with current model. Finally, by introducing parasitic components, the capacitances for the full structure of the HEMT devices are given. The model is evaluated step-by-step with good agreements compared with the TCAD simulations and the experimental data. Meanwhile, the effects of bulk traps and surface traps in the capacitances are analyzed. The complete model, including currents and capacitances has been implemented in i-MOS platform for evaluations and circuit simulations.
A Comprehensive Graphene FET Model for Circuit Design

Saul Rodriguez,Sam Vaziri,Anderson Smith,Sebastien Fregonese,Mikael Ostling,Max C. Lemme,Ana Rusu

DOI: https://doi.org/10.1109/TED.2014.2302372

2014-05-08

Abstract:During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time, analytical models that predict the electrical characteristics of GFETs have evolved rapidly. These models, however, have a complexity level that can only be handled with the help of a circuit simulator. On the other hand, analog circuit designers require simple models that enable them to carry out fast hand calculations, i.e., to create circuits using small-signal hybrid-{\pi} models, calculate figures of merit, estimate gains, pole-zero positions, etc. This paper presents a comprehensive GFET model that is simple enough for being used in hand-calculations during circuit design and at the same time it is accurate enough to capture the electrical characteristics of the devices in the operating regions of interest. Closed analytical expressions are provided for the drain current ID, small-signal transconductance gain gm, output resistance ro, and parasitic Vgs and Cgd. In addition, figures of merit such as intrinsic voltage gain AV, transconductance efficiency gm/ID, and transit frequency fT are presented. The proposed model has been compared to a complete analytical model and also to measured data available in current literature. The results show that the proposed model follows closely to both the complete analytical model and the measured data; therefore, it can be successfully applied in the design of GFET analog circuits.

Mesoscale and Nanoscale Physics
Analytical Loss Model of Low Voltage Enhancement Mode GaN HEMTs

Wang Kangping,Yang Xu,Zeng Xiangjun,Yu Xiaoling,Li Hongchang,Guo Yixuan,Gao Bing,Ma Huan

DOI: https://doi.org/10.1109/ecce.2014.6953381

2014-01-01

Abstract:An analytical model is proposed in this paper to calculate the switching loss of low voltage enhancement mode Gallium Nitride high electron mobility transistors (eGaN HEMTs). The switching process is illustrated in detail. The switching loss is obtained by solving the equivalent circuits during the switching transition. A good agreement is shown between the analytical model and Spice simulation results. In addition, in order to accurately measure the current transition waveform, a novel current measuring method based on magnetic coupling is proposed. Finally, a buck converter is designed to validate the accuracy of the proposed model.

Gallium Nitride FET Model

Analyzing E-Mode p-Channel GaN H-FETs Using an Analytic Physics-Based Compact Model

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

Monolithically Integrated GaN Power ICs Designed Using the MIT Virtual Source GaNFET (MVSG) Compact Model for Enhancement-Mode P-Gan Gate Power HEMTs, Logic Transistors and Resistors

A compact Non-Quasi-Static small-signal model for GaN HEMT

A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate

An On-State Analytical Model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review

Analytical Model for High Current Density Trench Gate Mosfet

Model the AlGaN/GaN high electron mobility transistors

Physics-Based Compact Model for AlGaN/GaN MODFETs with Close-Formed $I$ – $V$ and $C$ – $V$ Characteristics

Simplified EPFL GaN HEMT Model

A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs

Analytical Models for Gan-Based Heterostructure-Free Normally off Fin-Shaped Field-Effect Transistor

A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

A Comprehensive Graphene FET Model for Circuit Design

Analytical Loss Model of Low Voltage Enhancement Mode GaN HEMTs