Abstract:The present Hall mobility observed for B‐doped diamonds compares with previously reported ones around room temperature as a function of acceptor B concentration. It is clearly found that the mobility of the sample with a doping concentration of 3.5 × 1018 cm−3 is close to the ideal value. The low‐concentration boron doping is performed from 1016 to 1018 cm−3 by ion implantation into heteroepitaxially synthesized large‐area diamond and electrical properties are investigated. Photoluminescence analysis is first carried out to clarify the optical properties of the heteroepitaxial diamond substrate. As a result, defect complexes of nitrogen‐vacancy and silicon‐vacancy are hardly detected in this substrate, suggesting that optically high‐purity diamond can be accomplished by heteroepitaxial growth. Then, the electrical properties of resistivity, mobility, carrier concentration, and conductive type by Hall effect measurements are investigated. For the samples with doping concentrations higher than 1016 cm−3, the electrical activation of implanted B acting as acceptors is confirmed. The compensation ratio for the sample with 3.5 × 1017 cm−3 concentration reaches 76%, indicating the presence of compensating donor‐like centers. With increasing the doping concentration to 3.5 × 1018 cm−3, the compensation ratio is significantly reduced to 35%. The observed mobility of the higher doped sample takes almost the ideal value observed for the sample doped by chemical vapor deposition process. It is suggested that the heteroepitaxial synthesis of large‐area and high‐purity substrates should contribute to the further development of the application to electronic, optical, and sensing devices in the future.

n -type doping of diamond surface by potassium

The Boron-Phosphorous Co-Doping Scheme for Possible N-Type Diamond from First Principles

First-principles screening of surface-charge-transfer molecular dopants for n-type diamond

Nitrogen Modulation of Boron Doping Behavior for Accessible N-Type Diamond

First-principles calculation to N-type Li N Co-doping and Li doping in diamond

Seebeck Measurements of N-Doped Diamond Thin Film

N-type lithium-nitrogen codoping in diamond from first principles

Boron–oxygen Complex Yields N-Type Surface Layer in Semiconducting Diamond

First-Principles Calculations of P-B Co-Doped Cluster N-Type Diamond

First-principles prediction of n-type diamond: Novel co-doped structure using N and Be impurities

First-Principles Calculation to N-type Beryllium Related Co-doping and Beryllium Doping in Diamond.

N-Type Doping of Highly Tetrahedral Diamond-Like Amorphous Carbon

Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers

First Principles Investigation on the Boron-VA (VA=N, P, As, Sb) Complexes in Diamond for Possible N-Type Conductivity

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

Doping of rf plasma deposited diamond-like carbon films

Study of N-Type Electrical Conductivity in Deuterated Boron-Doped Diamond

Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond

High-electron-affinity Oxide V2O5 Enhances Surface Transfer Doping on Hydrogen-Terminated Diamond

N-type diamond semiconductor induced by co-doping selenium and boron

A Theoretical Study on Dopants Substituted on the H-terminated Surface Regulating the Threshold Concentration of Nitrogen for Accelerating Diamond Growth