Abstract:Diamond has been one of the most investigated ultrawide bandgap (UWBG) semiconductors for optoelectronics, superconductors, energy, and quantum applications for almost half of a century owing to its unique properties. Diamonds' intrinsic features-a large bandgap (5.47 eV), an extremely high breakdown voltage (10 MV/cm), the highest thermal conductivity (2200 W/m-K), and very high radiation-tolerance, make them promising for high-power, high-frequency devices suitable for high-temperature and extreme radiation environments. Since the demand for high-speed consumer electronics with large power and faster data handling capacity is rising at an unprecedented rate in the post-COVID era, diamonds' excellent mobility of electrons and holes (4500 and 3800 cm 2 /V-s) make them ideal for servers and systems. To materialize these multipurpose devices with higher efficiency and endurance than Si and SiC-based technologies, diamonds with good p- and n-type conductivity are needed. Therefore, nearly several decades-long efforts have been devoted to understanding and controlling the carrier conductivities in diamonds. Furthermore, diamonds' color centers' remarkable application as the qubit for next-generation quantum computers has also sparked interest in investigating diamond point defects at the quantum level. Hence, it is necessary to comprehensively study the fabrication, doping, and applications in semiconducting and quantum devices to stay relevant to the diamond revolution and thus advance this flourishing field. Therefore, this review article summarizes the current status and breakthroughs in diamond doping and devices fabricated using doped diamonds to provide an overview of the challenges and successes in using this highly promising UWBG material in electronic, superconducting, and quantum applications.

Study of N-Type Electrical Conductivity in Deuterated Boron-Doped Diamond

Study of Electrical Conductivity in Boron/Hydrogen-Doped Diamond Film

Seebeck Measurements of N-Doped Diamond Thin Film

Nitrogen Modulation of Boron Doping Behavior for Accessible N-Type Diamond

First-Principles Calculation to N-type Beryllium Related Co-doping and Beryllium Doping in Diamond.

The Boron-Phosphorous Co-Doping Scheme for Possible N-Type Diamond from First Principles

N-type lithium-nitrogen codoping in diamond from first principles

First Principles Investigation on the Boron-VA (VA=N, P, As, Sb) Complexes in Diamond for Possible N-Type Conductivity

N- and P-type doping of diamonds: A review

First-principles calculation to N-type Li N Co-doping and Li doping in diamond

Boron–oxygen Complex Yields N-Type Surface Layer in Semiconducting Diamond

N-type diamond semiconductor induced by co-doping selenium and boron

Thermal diffusion boron doping of single-crystal natural diamond

Tuning donor level of nitrogen-doped diamond by deep strain engineering—An ab initio study

Thermal Diffusion Boron Doping of Single-Crystal Diamond

(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

Thermal Diffusion Doping of Single Crystal Diamond

The first principle study and experimental of boron synergistic sulfur doping in diamond

Superconductivity and metallic behavior in heavily doped bulk single crystal diamond and graphene/diamond heterostructure

First-principles prediction of n-type diamond: Novel co-doped structure using N and Be impurities

First-Principles Calculations of P-B Co-Doped Cluster N-Type Diamond