First-principles prediction of n-type diamond: Novel co-doped structure using N and Be impurities

xiang sun,Wei Shen,Chunmin Cheng,Dongliang Zhang,Shizhao Wang,Gai Wu,Kang Liang
DOI: https://doi.org/10.1088/1361-6463/ad2be1
2024-02-22
Journal of Physics D Applied Physics
Abstract:To address the limitation of diamond-based electronic devices, a comprehensive study on n-type diamond is crucial. A novel dopant structure, nitrogen-beryllium co-doping, is proposed for achieving n-type doping. The dopant structure, electronic property, synthesis route and internal strain are analyzed using first-principles density functional theory. The formation energy and ionization energy of xN-Be (x=1–4) are compared to elucidate the distinct doping effects associated with varying numbers of N atoms. The formation energy initially decreases and then gradually increases with an incensing number of N atoms. Notably, 3N-Be and 4N-Be exhibit appealing n-type diamond properties, with low ionization energies of 0.30 ~ 0.41 eV (3N-Be) and 0.23 ~ 0.37 eV (4N-Be). To facilitate the preparation of 3/4N-Be co-doped diamond, a non-molecular synthetic route is proposed, involving the prior generation of the 3N-V and 4N-V. The 3/4N-Be co-doped diamond exhibits relatively small strain energy. Finally, this investigation highlights the potential of 3/4N-Be co-doping as excellent choices for n-type dopants, providing a greater variety of n-type structures with similar ionization energy compared to 4N-Li co-doping.
physics, applied
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