Abstract:<p>In this paper, optical absorption spectrum, band structure and electrical structure of diamond doped with B,S are investigated by density functional theory (DFT).Comparing optical absorption spectra of diamond un-doped and doped with B, S, absorption band edge of type IIa and type Ib diamonds doped with B,S move toward long wavelength direction and there are an absorption coefficient at a wavelength greater than that at 400 nm. In addition, incorporation of B contribute to improvement of conductive properties of diamond doped with B-S. At the same time, comparing density of state for diamond doped with B or B-S, it is found that S-3p, B-2 s and B-2p contribute to conduction band. In summary, it can be considered that conductivity type of diamond with B-S co-doped is n-type semiconductor, and with synergy of B, S is as a suitable shallow donor impurity in diamond. Furthermore, in order to confirm above calculation results, type IIa and type Ib large single crystal diamond doped with B, S are synthesized under FeNi-C system. The color change of diamond is consistent with results of diamond optical absorption spectrum in DFT. The electrical measurement results show that type IIa and type Ib diamond doped with B,S present n-type semiconductor characteristics. The incorporation of B contributes to the improvement of electrical properties of diamond doped with S.</p>

First Principles Investigation on the Boron-Oxygen Complexes in Diamond

The Boron-Phosphorous Co-Doping Scheme for Possible N-Type Diamond from First Principles

First Principles Investigation on the Boron-VA (VA=N, P, As, Sb) Complexes in Diamond for Possible N-Type Conductivity

First-Principles Calculation to N-type Beryllium Related Co-doping and Beryllium Doping in Diamond.

First-Principles Calculations of P-B Co-Doped Cluster N-Type Diamond

Boron–oxygen Complex Yields N-Type Surface Layer in Semiconducting Diamond

Nitrogen Modulation of Boron Doping Behavior for Accessible N-Type Diamond

The first principle study and experimental of boron synergistic sulfur doping in diamond

Insight into BS ratio model and surface atom interactions of co-doping diamond: First-principles studies

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

First-principles calculation to N-type Li N Co-doping and Li doping in diamond

Morphology, Defects and Electrical Properties of Boron-Doped Single Crystal Diamond under Various Oxygen Concentration

First-principles prediction of n-type diamond: Novel co-doped structure using N and Be impurities

Effect of Oxygen on Regulation of Properties of Moderately Boron-Doped Diamond Films

Effect of B-complexes on lattice structure and electronic properties in heavily boron-doped diamond

Suppression and Compensation Effect of Oxygen on the Behavior of Heavily Boron-Doped Diamond Films

First-principles study of N and S co-doping in diamond

N-type diamond semiconductor induced by co-doping selenium and boron

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Ab initio investigation of the effects of B-doping on the adsorption of H2O, H2 and O2 molecules at diamond surfaces

First-Principles Study of O-Bn: A Sp(3)-Bonding Boron Nitride Allotrope