120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode
Honghui Liu,Zhiwen Liang,Jin Meng,Yuebo Liu,Hongyue Wang,Chaokun Yan,Zhisheng Wu,Yang Liu,Dehai Zhang,Xinqiang Wang,Baijun Zhang
DOI: https://doi.org/10.3390/mi13081172
IF: 3.4
2022-07-26
Micromachines
Abstract:Traditional GaAs-based frequency multipliers still exhibit great challenges to meet the demand for solid-state high-power THz sources due to low breakdown voltage and heat dissipation of the Schottky barrier diode (SBD). In this study, a GaN SBD chain was fabricated with n−/n+-GaN structure. As a consequence, the breakdown voltage of 54.9 V at 1 μA and cut-off frequency of 587.5 GHz at zero bias were obtained. A 120 GHz frequency-doubler module based on the GaN SBD chain was designed and fabricated. When driven with 500 mW input power in a continuous wave, the output power of the frequency-doubler module was 15.1 mW at 120 GHz. Moreover, the experiments show that the frequency-doubler module can endure an input power of 2 W. In addition, it is worth noting that the SBD chain works well at an anode temperature of 337.2 °C.
chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied