Abstract:As a typical third-generation semiconductor material, silicon carbide (SiC) has been increasingly used in recent years. However, the outstanding performance of SiC component can only be obtained when it has a high-quality surface and low-damage subsurface. Due to the hard–brittle property of SiC, it remains a challenge to investigate the ductile machining mechanism, especially at the nano scale. In this study, a three-dimensional molecular dynamics (MD) simulation model of nanometric cutting on monocrystalline 3C-SiC was established based on the ABOP Tersoff potential. Multi-group MD simulations were performed to study the removal mechanism of SiC at the nano scale. The effects of both cutting speed and undeformed cutting thickness on the material removal mechanism were considered. The ductile machining mechanism, cutting force, hydrostatic pressure, and tool wear was analyzed in depth. It was determined that the chip formation was dominated by the extrusion action rather than the shear theory during the nanocutting process. The performance and service life of the diamond tool can be effectively improved by properly increasing the cutting speed and reducing the undeformed cutting thickness. Additionally, the nanometric cutting at a higher cutting speed was able to improve the material removal rate but reduced the quality of machined surface and enlarged the subsurface damage of SiC. It is believed that the results can promote the level of ultraprecision machining technology.

Two-dimensional structure evolution and formation of silicon carbides and diamonds in a nano-abrasion process

Coherent interfaces with mixed hybridization govern direct transformation from graphite to diamond

Phase Transformations of Mono-Crystal Silicon Induced by Two-Body and Three-Body Abrasion in Nanoscale

Atomistic origin of brittle-to-ductile transition behavior of polycrystalline 3C–SiC in diamond cutting

Two-Dimensional Diamond Formation Drivers in Chemical Vapor Deposition: Planar Defects and Graphite

Study on wear of diamond during scratching SiC using molecular dynamics simulations

Molecular Dynamics Simulation and Experimental Investigation of Structural Transformation and Graphitization in Diamond During Friction

Atomistic insights on the nanoscale single grain scratching mechanism of silicon carbide ceramic based on molecular dynamics simulation

Microstructure Changes of Diamond and Amorphous Carbon under Shear Conditions

Surface Evolution and Stability Transition of Silicon Wafer Subjected to Nano-Diamond Grinding

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Atomic Simulations of Deformation Mechanism of 3C-SiC Polishing Process with a Rolling Abrasive

Effects of three-body diamond abrasive polishing on silicon carbide surface based on molecular dynamics simulations

Transformation between different hybridized bonding structures in two-dimensional diamond-based materials

On the deformation mechanism of SiC under nano-scratching: An experimental investigation

New stable two dimensional silicon carbide nanosheets

A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

Impact of multiple abrasive particles on surface properties of SiC: A molecular dynamics simulation study

Atomistic investigation of machinability of monocrystalline 3C–SiC in elliptical vibration-assisted diamond cutting

Influence of crystallographic effect on tool wear, cutting stress, cutting temperature, cutting force and subsurface damage in nano cutting of single crystal silicon carbide

Formation of high density stacking faults in polycrystalline 3C-SiC by vibration-assisted diamond cutting