High-density nanodot structures on silicon solar cell surfaces irradiated by ultraviolet laser pulses below the melting threshold fluence

Kenta Hirai,Tomoyo Tanaka,Daisuke Tsutsumi,Masaki Hashida,Hitoshi Sakagami,Mitsuhiro Kusaba
DOI: https://doi.org/10.1088/1361-6463/ad58ec
2024-06-19
Journal of Physics D Applied Physics
Abstract:The surface morphology of silicon solar cells irradiated with KrF excimer laser pulses (λ = 248 nm, τ = 20 ns) was investigated below the experimentally observed melting threshold fluence (F th ) of 0.47 J/cm 2 (±20%). At laser fluences of 0.23–0.48 J/cm 2 (equivalent to 0.48F th to 1.0F th ), nanodot structures with a height and width of approximately 60–120 nm were periodically formed with an interdot spacing similar to the laser wavelength. The observed nanodot density (29 dots/μm 2 ) was higher than that previously obtained at longer wavelengths. Furthermore, crystallinity analysis by micro-Raman spectroscopy revealed a Raman shift of 519.56 cm −1 after irradiation (N = 1500 pulses), compared with 518.27 cm −1 prior to irradiation. A laser fluence of 0.41 J/cm 2 (= 0.87F th ) was found to induce compressive stress on the silicon solar cell surface.
physics, applied
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