Abstract:Despite the maturity of crystalline silicon photovoltaics (c-Si PV), the last 6 years have seen a string of efficiency improvements, most of which are centered around reducing the losses related to the directly metallized, heavily doped regions found in conventional c-Si solar cells. Among these advancements, polysilicon (poly-Si) passivated junctions, formed by embedding a thin silicon oxide (SiO<sub>2</sub>) layer between the c-Si wafer and a highly doped poly-Si layer, are emerging as one of the most promising alternatives, and efficiencies above 26% have already been demonstrated. The excellent performance of this junction architecture has been found to be remarkably independent of the deposition and/or doping technique used—even extending to techniques already prevalent in industry. This greatly reduces the capital and retraining expenditure needed to integrate the new technology into mainstream production lines, allowing it to be an evolutionary, rather than disruptive advancement. This has led to the rapid demonstration of large-area cells featuring poly-Si contacts by multiple PV manufacturing companies, with efficiencies above 24.5%. Although a bright future for poly-Si junctions is anticipated, as supported by the predictions of the International Technology Roadmap of Photovoltaics, several issues remain to be resolved, including those associated with the cost of and damage to the poly-Si layers due to the cell's metallization process. This paper provides a perspective of the remaining challenges and potential of poly-Si junctions to transform the PV industry.

What problem does this paper attempt to address?

The paper primarily explores the application and development potential of polycrystalline silicon (poly-Si) passivated junction technology in silicon solar cells. Below is a summary of the key issues the paper attempts to address: 1. **Background and Current Status**: Crystalline silicon (c-Si) solar cells have dominated the photovoltaic market since the 1980s. Through continuous technological improvements and cost reductions, they have become one of the lowest-cost sources of electricity in the market. To further improve conversion efficiency and reduce costs, researchers are exploring new technologies, particularly "passivated contact" technology. 2. **Polycrystalline Silicon Passivated Junction Technology**: In recent years, polycrystalline silicon passivated junction technology has become one of the most focused technologies due to its excellent performance and high compatibility with existing manufacturing processes. This technology forms a passivated junction by embedding a thin layer of silicon dioxide (SiO2) between the c-Si substrate and the highly doped polycrystalline silicon layer, thereby reducing losses in the direct metallization area and improving overall conversion efficiency. 3. **Experimental Progress**: Small-area (approximately 244 cm²) n-type and p-type substrate solar cells have achieved conversion efficiencies of over 26%. Several large photovoltaic manufacturers, such as Canadian Solar, GCL, and JinkoSolar, have demonstrated breakthrough results with large-area cells using polycrystalline silicon passivated junctions. 4. **Future Predictions**: According to the International Technology Roadmap for Photovoltaic (ITRPV), by 2030, the market share of solar cells using polycrystalline silicon passivated junction architecture will reach nearly 35%, with average conversion efficiencies reaching 24% and 24.5% (for p-type and n-type substrates, respectively). 5. **Challenges and Opportunities**: Despite significant progress, some challenges remain, including the cost of the polycrystalline silicon layer and its damage during the metallization process. The paper also discusses the development of carrier-selective junction technology based on doped silicon and the preparation methods for polycrystalline silicon passivated junctions, including interface layer growth, silicon film deposition, dopant introduction, silicon recrystallization and activation, and hydrogenation treatment. In summary, the paper aims to assess the current status, progress, and future prospects of polycrystalline silicon passivated junction technology in the field of silicon solar cells, highlighting the importance and potential of this technology as the next generation of photovoltaic technology.

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