Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Pores in p-type GaN by annealing under nitrogen atmosphere: formation and photodetector

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

InGaN/GaN P-I-n Photodiodes Fabricated with Mg-Doped P-Ingan Layer

P-Type Gan Directly Grown by Low Pressure Metalorganic Vapor Phase Epitaxy

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Threading dislocations reduction of GaN-on-Si by introducing AlN/3D-GaN with SiN interlayer for photodetectors

Direct Growth of Polycrystalline GaN Porous Layer with Rich Nitrogen Vacancies: Application to Catalyst-Free Electrochemical Detection

Foam-like GaN: Study on the controlled tuning of pore size by R group change in amino acid etchant and its ultra-high photocurrent response

Nanoparticles to Nanoholes: Fabrication of Porous GaN with Precisely Controlled Dimension Via the Enhanced GaN Decomposition by Au Nanoparticles

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

Porous GaN Photoelectrode Fabricated by Photo-Assisted Electrochemical Etching Using Ionic Liquid As Etchant

Fabrication of freestanding GaN nanobelts with enhanced ultraviolet photoresponse performance

Growth and Photocurrent Property of GaN/anodic Alumina/si

Comparison of As-Grown and Annealed GaN/InGaN : Mg Samples

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

5b.4 GaN PN Junction Diode Based on Heated Magnesium Implantation And High Temperature Annealing

Optical and Electrical Properties of GaN: Mg Grown by MOCVD

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Effect of thermal annealing on GaN pn-junction diode with Pt/Ag as ohmic contact

High Quality MBE-grown GaN P-N Nanowires and Their Carrier Transport Control for Photoelectrochemical Ultraviolet Photodetection