A low operating power FinFET transistor module featuring scaled gate stack and strain engineering for 32/28nm SoC technology
Tzu-Chiang Chen,M. Cao,Chih-Hao Chang,Chia-Feng Hu,J.C. Sheu,Hsien-Chin Lin,T. Kuan,Ching-Yu Chan,F. Yuan,Jeff J. Xu,Hong-Nien Lin,L. Yao,C. Wann,Shu-Ting Yang,T. Ko,Tsung-Lin Lee,W. Tseng,M. Shieh,Shih-Cheng Chen,H.T. Lin,H. Tao,C. Ho,N. Chen,Shih-Ting Hung,C. Fu,Chang-Yun Chang,Shyue-Shyh Lin,T. Perng,L. Lai,Chia-Cheng Chen,Chia-Pin Lin,C. Yeh,Chih-Sheng Chang
DOI: https://doi.org/10.1109/IEDM.2010.5703473
2010-12-01
Abstract:We show that FinFET, a leading transistor architecture candidate of choice for high performance CPU applications [1–3], can also be extended for general purpose SoC applications by proper device optimization. We demonstrate superior, best-in-its-class performance to our knowledge, as well as multi-Vt flexibility for low-operating power (LOP) applications. By high-k/metal-gate (HK/MG) and process flow optimizations, significant drive current (ION) improvement and leakage current (IOFF) reduction have been achieved through equivalent oxide thickness (EOT) scaling and carrier mobility improvement. N-FinFET and P-FinFET achieve, when normalized to Weff (Weff=2xHf+Wf), ION of 1325 µA/µm and 1000 µA/µm at 1 nA/µm leakage current under VDD of 1 V, and 960 uA/um and 690 uA/um at 1 nA/um under Vdd of 0.8V, respectively. This FinFET transistor module is promising for a 32/28nm SoC technology.
Engineering,Materials Science,Computer Science