Abstract:A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a semiconductor laser structure. High energy (MeV) ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing (rapid thermal annealing), these defects enhance the intermixing of the QW and the barrier materials while being annealed out, producing a blue shift of the QW bandgap. Increases in bandgap energy of greater than 100 nm at 1.55 mu m in InGaAs/lnGaAsP/InP structures can be achieved. Absorption spectroscopy in the waveguide geometry is used to quantify the losses in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, amplifiers and waveguides on a single wafer using only a single, postgrowth processing step. The performance of both passive (waveguide) and active (laser and amplifier) devices produced using this technique will be described, as well as the practicality of this technique in the production of photonic integrated circuits.

1.3-μm identical active electro-absorption modulated laser with quantum well intermixed passive waveguide

1.3-µm identical active electro-absorption modulated laser with quantum well intermixed passive waveguide

Photonic integrated circuits fabricated using quantum well intermixing

Photonic-integrated circuits and components using quantum well intermixing

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Q-modulated Semiconductor Laser Using Deep Etched Subwavelength Trenches

InGaAsP Multiple-Quantum-Well Electroabsorption Modulator Integrated With V-Cavity Laser

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

InGaAsP/InP Based Q-modulated Slotted Fabry-Perot Laser Employing Lossy Half-Wave Trenches

Multi-bandgap Photonic Materials and Devices Fabricated by UV-laser Induced Quantum Well Intermixing

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Monolithic Integration of Tunable V-coupled-cavity Laser and Mach-Zehnder Modulator on Generic InP Platform

Large bandgap shift by UV excimer laser induced quantum well intermixing for photonic integration

Q-modulated Semiconductor Laser

Polarization-insensitive Quantum Well Optoelectronic Devices Using Quantum Well Shape Modification

Proposal for $Q$ -Modulated Semiconductor Laser

Monolithically integrated device composed of MQW GaAlAs/GaAs gain-coupled DFB laser and electroabsorption modulator