Abstract:Direct growth of wafer‐level, ultra‐flat graphene without any wrinkles and metallic impurities is implemented on quartz via inhibition of textured SiOx seed, identification of critical temperature regime, and in‐situ flattening of substrate surface.The elimination of wrinkles has become a research hotspot in the realm of the chemical vapor deposition growth of graphene, and there have been reliable routes developed for the scenario of catalytic synthesis on metals. Nonetheless, the transfer‐free growth of graphene over insulating substrates affording ultra‐flatness remains a puzzle. Here, the authors report the direct preparation of ultra‐flat graphene on an economical quartz glass substrate at a wafer level, without any wrinkles and metallic impurities, is reported. Density functional theory calculations are employed to establish that graphene adlayer is prone to generate in the presence of textured particulates. In parallel, a critical temperature regime (1443–1453 K), is identified within which graphene adlayer‐restrained forming and substrate in‐situ flattening could simultaneously occur. The thus‐obtained graphene enables the atomically smooth growth of a GaN film with (001) single‐crystallinity over the amorphous substrate. This technique is particularly attractive in the context of cost‐effective integration of emerging III‐nitrides toward exciting applications.

Direct growth of wafer-scale highly oriented graphene on sapphire

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Direct Growth of GaN on Sapphire with Non-Catalytic CVD Graphene Layers at High Temperature

Modulating Growth of Graphene on Sapphire by Chemical Vapor Deposition

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Wafer-scale growth of single-crystal graphene on vicinal Ge(001) substrate

Toward Direct Growth of Ultra‐Flat Graphene

Layered Graphene Growth Directly on Sapphire Substrates for Applications

Going beyond copper: wafer-scale synthesis of graphene on sapphire

Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

Direct Growth of Globally Aligned Graphene Nanoribbons on Reconstructed Sapphire Substrate Using PECVD

Chemical Vapor Deposition Synthesis of Graphene over Sapphire Substrates

Toward Direct Growth of Ultra‐Flat Graphene (adv. Funct. Mater. 42/2022)

Heteroepitaxial Writing of Silicon-on-Sapphire Nanowires.

Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition.

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.

Influence of substrate sapphire orientation on direct CVD growth of graphene

Autonomously Controlled Homogenous Growth of Wafer‐Sized High‐Quality Graphene Via a Smart Janus Substrate

Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition

Direct synthesis of single-crystal bilayer graphene on various dielectric substrates