Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Influence of substrate sapphire orientation on direct CVD growth of graphene

Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Exploring GaN crystallographic orientation disparity and its origin on bare and partly graphene-covered $m$-plane sapphire substrates

Chemical Vapor Deposition Synthesis of Graphene over Sapphire Substrates

Impact of c - and m - sapphire plane orientations on the structural and electrical properties of β-Ga 2 O 3 thin films grown by metal-organic chemical vapor deposition

Layered Graphene Growth Directly on Sapphire Substrates for Applications

Direct growth of wafer-scale highly oriented graphene on sapphire

Single- and Bi-Layer Graphene Grown on Sapphire by Molecular Beam Epitaxy

Direct Chemical Vapor Deposition Growth Of Graphene On Insulating Substrates

Oriented lateral growth of two-dimensional materials on c -plane sapphire

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Slip‐line‐guided Growth of Graphene

Substrate Engineering for CVD Growth of Single Crystal Graphene

Critical Role of Surface Termination of Sapphire Substrates in Crystallographic Epitaxial Growth of MoS2 Using Inorganic Molecular Precursors.

Toward Epitaxial Growth of Misorientation-Free Graphene on Cu(111) Foils

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire

Effect of Polar Faces of SiC on the Epitaxial Growth of Graphene: Growth Mechanism and Its Implications for Structural and Electrical Properties

Relating the Orientation of Graphene on Cu Grains by Euler Angles

Orientation-dependent Strain and Dislocation in HVPE-grown Α -Ga2o3 Epilayers on Sapphire Substrates