Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Toward Epitaxial Growth of Misorientation-Free Graphene on Cu(111) Foils

Surface crystallographic structure insensitive growth of oriented graphene domains on Cu substrates

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

The role of Cu crystallographic orientations towards growing superclean graphene on meter-sized scale

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Relationship between graphene nucleation density and epitaxial growth orientation on Cu(111) surfaces

Influence of substrate sapphire orientation on direct CVD growth of graphene

Influence of Defects in SiC (0001) on Epitaxial Graphene

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Relating the Orientation of Graphene on Cu Grains by Euler Angles

Surface Structures Of Single-Crystal Graphene On Cu/Ni(111) And Ge(110) Substrates Studied By Scanning Tunneling Microscopy

Interfacial Coupling Induced Discrete Orientation of Epitaxial Graphene on High‐Index Cu Substrates

Graphene adhesion on mica: Role of surface morphology

Slip‐line‐guided Growth of Graphene

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Wafer-scale growth of single-crystal graphene on vicinal Ge(001) substrate

Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect of Single Crystalline Graphene Grown on Ge(110)

Revealing the Crystalline Integrity of Wafer-Scale Graphene on SiO2/Si: an Azimuthal RHEED Approach.

Exploring GaN crystallographic orientation disparity and its origin on bare and partly graphene-covered $m$-plane sapphire substrates