Growth of Ultraflat Graphene with Greatly Enhanced Mechanical Properties
Bing Deng,Yuan Hou,Ying Liu,Tymofiy Khodkov,Stijin Goossens,Jilin Tang,Yani Wang,Rui Yan,Yin Du,Frank H. L. Koppens,Xiaoding Wei,Zhong Zhang,Zhongfan Liu,Hailin Peng
DOI: https://doi.org/10.1021/acs.nanolett.0c02785
IF: 10.8
2020-07-30
Nano Letters
Abstract:Graphene grown on Cu by chemical vapor deposition is rough due to the surface roughening of Cu for releasing interfacial thermal stress and/or graphene bending energy. The roughness degrades the electrical conductance and mechanical strength of graphene. Here, by using vicinal Cu(111) and flat Cu(111) as model substrates, we investigated the critical role of original surface topography on the surface deformation of Cu covered by graphene. We demonstrated that terrace steps on vicinal Cu(111) dominate the formation of step bunches (SBs). Atomically flat graphene with roughness down to 0.2 nm was grown on flat Cu(111) films. When SB-induced ripples were avoided, as-grown ultraflat graphene maintained its flat feature after transfer. The ultraflat graphene exhibited extraordinary mechanical properties with Young's modulus ≈ 940 GPa and strength ≈ 117 GPa, comparable to mechanical exfoliated ones. Molecular dynamics simulation revealed the mechanism of softened elastic response and weakened strength of graphene with rippled structures.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c02785?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02785</a>.Fabrication of single-crystal Cu(111) foils and Cu(111) films, growth of graphene, transfer of graphene, characterization, measurement of the thermal expansion coefficient, transport measurement, AFM nanoindentation test, molecular dynamics simulation, fabrication and characterization of Cu(111) foil and single-crystal Cu(111) films, surface roughness of Cu(111) foils, height and width and orientation of Cu step bunches, influence of rolling lines and surface topography on the step bunches of Cu substrate, WLI image, surface flatness, and surface roughness of Cu(111) films, surface roughness of Cu<sub>90</sub>Ni<sub>10</sub>(111) films, measurement of the thermal expansion coefficient, strain relaxation, strain remaining in graphene lattice, epitaxial growth, mass production of ultraflat single-crystal graphene wafers, formation of graphene ripples, stepwise change in the load–displacement curve of rough graphene, fracture of graphene under nanoindentation, Raman spectra, algorithm to construct the rippled graphene atomistic models, transport measurement of the ultraflat graphene, SEM image, and summary of modulus and strength of graphene (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c02785/suppl_file/nl0c02785_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology