Analysis of Multilayer Structure for Reflection of Extreme-Ultraviolet Wavelength

Seung Yoon Lee,Sung Min Hur,Hyung Joon Kim,Chong Seung Yoon,Young Tae Lee,In Yong Kang,Yong-Chae Chung,Moonsuk Yi,Cheol Kyu Bok,Ohyun Kim,Jinho Ahn
DOI: https://doi.org/10.1143/jjap.41.4086
IF: 1.5
2002-06-30
Japanese Journal of Applied Physics
Abstract:Mo/Si multilayers deposited by sputtering for application to extreme-ultraviolet (EUV) reflectors have been characterized. Since the control of d-spacing is critical for achieving higher reflectivity, an effective and accurate d-spacing measurement technology is required. Although cross-sectional transmission electron microscope (TEM) and low-angle X-ray diffraction (XRD) are standard methods for evaluating multilayers, they provide different d-spacing values from each other. Cross-sectional TEM images can allow direct measurement of individual layers and cannot reveal the optical behavior of the multilayer. On the other hand, low-angle XRD analysis can provide the resultant d-spacing which includes nonideal factors. As a result, low-angle XRD can predict the EUV peak position more precisely than TEM analysis.
physics, applied
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