Electroluminescence from GaN‐Based Quantum Dots

Sheng‐Nan Li,Fan‐Cheng Kong,Yan‐Jun Yu,Shu‐Guang Meng,Zhi‐Hao Qu,Ya‐Kun Wang,Liang‐Sheng Liao

DOI: https://doi.org/10.1002/adom.202301427

IF: 9

2023-07-22

Advanced Optical Materials

Abstract:Zn‐doped GaN quantum dots are proposed to achieve the first GaN‐based quantum light‐emitting diode. The combination of a synthetic strategy using the hot‐injection method with Zn doping for energy level adjustment and chemical posttreatment for size and morphology engineering proves to be the reason for the electroluminescence. Finally, the optimized quantum dot is fabricated in the first GaN quantum dot‐based light‐emitting diodes. Bulk gallium nitride (GaN) has shown great success in light‐emitting diodes (LEDs), but the use of its counterpart GaN quantum dots (QDs) to obtain electroluminescence has not yet been reported. In this work, the first GaN‐based QLED is demonstrated using Zn‐doped GaN (GaN: Zn) QDs, which is achieved through the combination of trap passivation, energy level adjustment, and morphology engineering. Pure GaN QDs and GaN: Zn QDs are synthesized, and it is found that Zn doping shifts the GaN QD emission from 321 to 377 nm and tunes the highest occupied molecular orbital energy level from 8.6 eV (of original GaN QDs) to 6.9 eV. Multiple washing posttreatment is further developed to improve QD film morphology and size distribution. The optimized GaN: Zn QDs are employed to fabricate solution‐processed LEDs, and the first GaN‐based QLEDs are reported with a maximum quantum efficiency of 0.004%.

materials science, multidisciplinary,optics