Abstract:Valleytronics employs different electronic momenta to store, transfer, and process information potentially with less energy cost, but faces challenges of short valley lifetime and low efficiency in optical manipulation. This review summarizes recently proposed materials for valleytronics beyond monolayer transition metal dichalcogenides, and highlights challenges in finding new materials and valley operation principles toward information applications. Valleytronics, harnessing the valley degree of freedom in the momentum space, is a potential energy‐efficient approach for information encoding, manipulation, and storage. Valley degree of freedom exists in a few conventional semiconductors, but recently the emerging 2D materials, such as monolayer transition‐metal dichalcogenides (TMDs), are considered more ideal for valleytronics, due to the additional protection from spin‐valley locking enabled by their inversion symmetry breaking and large spin‐orbit coupling. However, current limitations in the valley lifetime, operation temperature, and light‐valley conversion efficiency in existing materials encumber the practical applications of valleytronics. In this article, the valley depolarization mechanisms and recent progress of novel materials are systematically reviewed for valleytronics beyond TMDs. Valley physics is first reviewed and the factors determining the valley lifetime, including the intrinsic electron‐electron and electron‐lattice interactions, as well as extrinsic defect effects. Then, experimentally demonstrated and theoretically proposed valley materials are introduced which potentially improve valley properties through the changes of spin‐orbit coupling, electronic interactions, time‐reversal symmetry, structures, and defects. Finally, the challenges and perspectives are summarized to realize valleytronic devices in the future.

Control of light–valley interactions in 2D transition metal dichalcogenides with nanophotonic structures

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Electron‐Induced Chirality‐Selective Routing of Valley Photons via Metallic Nanostructure

Steering Nonlinear Chiral Valley Photons Through Optical Orbit–Orbit Coupling

Manipulating Valley-Polarized Photoluminescence of MoS2 Monolayer at off Resonance Wavelength with a Double-Resonance Strategy

Valleytronics in transition metal dichalcogenides materials

Plasmonic Modulation of Valleytronic Emission in Two‐Dimensional Transition Metal Dichalcogenides

Topological Valley Photonics: Physics and Device Applications

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Valleytronics: Opportunities, Challenges, and Paths Forward.

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Valleytronics: Fundamental Challenges and Materials Beyond Transition Metal Chalcogenides

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Valley photonic crystals for control of spin and topology

Dichroic Spin–valley Photocurrent in Monolayer Molybdenum Disulphide

Valley selective optical control of excitons in 2D semiconductors using Chiral metasurface

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

Phonon-Limited Valley Polarization in Transition-Metal Dichalcogenides.

Review of Ultrafast Spectroscopy Studies of Valley Carrier Dynamics in Two-Dimensional Semiconducting Transition Metal Dichalcogenides

Controlling Valley-Specific Light Emission from Monolayer MoS 2 with Achiral Dielectric Metasurfaces