Improved grain boundary resistance inducing decreased dielectric loss and colossal permittivity in Y2/3Cu3Ti4O12 ceramics

Zhanhui Peng,Xing Wang,Shudong Xu,Fudong Zhang,Jitong Wang,Juanjuan Wang,Di Wu,Pengfei Liang,Lingling Wei,Xiaolian Chao,Zupei Yang
DOI: https://doi.org/10.1016/j.matchemphys.2022.125874
IF: 4.778
2022-05-01
Materials Chemistry and Physics
Abstract:How to simultaneously realize a low loss and a large permittivity has always been a thorny problem in the research of ACu3Ti4O12 (ACTO) family perovskite-like materials. In this work, we successfully synthesized Mg-doped Y2/3Cu3Ti4O12 (YCTO) ceramics with low dielectric loss and large permittivity via a mixed oxides technique. With a Mg doping level of 0.05, a Y2/3Mg0.05Cu2.95Ti4O12 ceramic displayed a suppressed dielectric loss tangent of ∼0.027 and a larger dielectric constant of ∼12,370. Moreover, the breakdown field strength of Y2/3Mg0.1Cu2.9Ti4O12 ceramics is up to 4.85 kV/cm. The improved dielectric properties of the produced ceramics were attributed to the enhanced grain boundary resistance upon Mg doping based on the data acquired from impedance and electric assessments. The findings presented in this work provide valuable insights on the simultaneous realization of a large permittivity and low dielectric loss in YCTO and other related dielectric ceramics.
materials science, multidisciplinary
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