Silicon nanowire aqueous dispersions for processing into macroscopic network materials

David Tilve-Martinez,Nabil Abomailek,Felipe Lozano-Steinmetz,Afshin Pendashteh,Juan J. Vilatela

DOI: https://doi.org/10.1039/d4cc02645d

IF: 4.9

2024-01-01

Chemical Communications

Abstract:Outline for the production of self-standing SiNW networks via wet processing.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Silicon nanowire aqueous dispersions for processing into macroscopic network materials

David Tilve-Martinez,Nabil Abomailek,Felipe Lozano-Steinmetz,Afshin Pendashteh,Juan J Vilatela

DOI: https://doi.org/10.1039/d4cc02645d

2024-09-05

Abstract:Nanowires and other high aspect ratio nanoparticles are building blocks to form network materials in formats such as films, sheets, fibres and electrodes that thus bridge the nano and macro scales. The assembly of nanowire network materials is enabled by a new floating catalyst chemical vapour deposition synthesis method that produces crystalline silicon nanowires (SiNW) on a scale of grams per day. Here, we produce SiNW dispersions in water by sonication through steric and electrostatic stabilisation of the negatively charged particles in basic pH or with cationic surfactants. Negative charge arises from the 1.3 nm-thin native oxide layer. Some permanent aggregates are found as a consequence of cross-links between the thin oxide at the surface of adjacent SiNWs. Removing them by centrifugation yields SiNW dispersions of 52 μg mL-1. Processing into macroscopic materials is demonstrated as transparent films and as freestanding sheets. In the sheets, the SiNWs are predominately aligned parallel to the sheet thickness, as a paper-like SiNW solid with tensile strength above 10 MPa, modulus above 1 GPa and toughness of 0.5 J g-1.
Ultrafast growth of single-crystalline Si nanowires

J.B. Chang,J.Z. Liu,P.X. Yan,L.F. Bai,Z.J. Yan,X.M. Yuan,Q. Yang

DOI: https://doi.org/10.1016/j.matlet.2005.12.085

IF: 3

2006-01-01

Materials Letters

Abstract:Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid–liquid–solid (SLS). Although gas phase of vapor–liquid–solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.
Metallization of Silicon Nanowires and Sers Response from A Single Metallized Nanowire

Cheng Fang,Ajay Agarwal,Effendi Widjaja,Marc V. Garland,She Mein Wong,Linn,Nizamudin Mohamed Khalid,Shaik Mohamed Salim,Narayanan Balasubramanian

DOI: https://doi.org/10.1021/cm900132j

IF: 10.508

2009-01-01

Chemistry of Materials

Abstract:A simple method was demonstrated to metallize silicon (Si) nanowire (NW)just by dipping it in to an aqueous deposition solution for several minutes. During the metallization process, meta I ions were reduced and deposited on the top of the Si NW (where surface Si was oxidized). The surface silicon oxide was simultaneously dissolved and removed by hydrogen fluoride (HF), so that the deposition reaction was sustainable and controllable. The deposited silver (Ag) nanoparticles (NPs) uniformly self-assembled along the Si NW and developed into a metal covering with the NW as its core. Not only Ag+ but also Cu2+, Pd2+, Co3+, Au3+, and Pt4+ were deposited to metallize the Si NW using the simplified metallization process. Applications of the new nanocomposite materials were also explored. When the resulting Ag NP/Si NW was tested as a surface-enhanced raman scattering (SERS) substrate, an extremely strong signal was observed and a detection limit of similar to 600 molecules or 200-300 Ag NPs per laser spot was reached. The significantly enhanced SERS effect appears to be associated with the close packing of the neighboring NPs that self-assemble along the highly curved NW.
Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

JJ Niu,J Sha,DR Yang

DOI: https://doi.org/10.1016/j.physe.2004.03.022

IF: 3.369

2004-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Silicon nano-wires (SiNWs) with diameter of ∼30nm and length of tens of micrometers on silicon wafers were synthesized by a novel thermal evaporation of zinc sulfide. After thermal evaporation at 1080°C for 1h, crystalline SiNWs were produced. It was found that the tip of SiNWs contained sulfur, while the other places of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. On the basis of the facts, a sulfide-assisted growth model of SiNWs was suggested.
Dispersion, Refinement, and Manipulation of Single Silicon Nanowires

JZ He,JB Xu,MS Xu,Z Xie,IH Wilson,XL Ma,Q Li,N Wang,LS Hung,CS Lee,ST Lee

DOI: https://doi.org/10.1063/1.1456966

IF: 4

2002-01-01

Applied Physics Letters

Abstract:We have successfully dispersed silicon nanowires in liquid by a mild etching treatment. A transmission electron microscopic study reveals that the etching occurs selectively at the defect sites of the wires. This implies that the treated wires have much fewer defects than those of the raw material. We have adopted an electrophoresis method, which is usually used in biosciences, to mount single nanowires onto chosen electrodes of a prototype device. The mounting of the wires was checked using scanning probe microscopes. Compared with the commonly used microactuation method, our method is far more applicable to industrial device fabrication, which may require simultaneous manipulation of a large number of wires.
Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

JJ Niu,J Sha,ZH Liu,ZX Su,J Yu,DR Yang

DOI: https://doi.org/10.1016/j.physe.2004.04.040

2004-01-01

Abstract:Thin silicon nano-wires (SiNWs) with a diameter of ∼10–20nm were fabricated by a simple thermal evaporation of silicon wafer at 1523K. The gold produced by an electrochemical method was covered on the wafer surface as catalyst. It was found that the SiNWs are amorphous and its Raman peak shifted down maybe due to the effect of laser heating and quantum confinement. Finally, a temperature gradient growth model is suggested to explain the growth direction of SiNWs.
Silicon Nanowire Synthesis by Chemical Vapor Deposition

王永成,唐静,郑耿锋

DOI: https://doi.org/10.1360/032013-241

2013-01-01

Scientia Sinica Chimica

Abstract:Semiconducting silicon nanowires (SiNWs) represent one of the most interesting research directions in nanoscience and nanotechnology, and have been successfully applied in the fields of biological sensing, lithium-ion battery, solar cells and so on, with capabilities of realizing structural and functional complexity through rational design and synthesis. Chemical vapor deposition (CVD) method is one of the most common methods in the bottom-up approach. This review provides a brief summary of SiNW synthesis through the CVD method in the past decade, which mainly divided into the single structured and complex structured SiNWs. The synthesis of single structured SiNWs includes intrinsic, doped, and super-long SiNWs. The synthesis of complex structured SiNWs includes the axial, radial heterostructures, kinked, and branched SiNWs.
Tiny silicon nano-wires synthesis on silicon wafers

Junjie Niu,Jian Sha,Yujie Ji,Deren Yang

DOI: https://doi.org/10.1016/j.physe.2004.06.041

2004-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:Tiny silicon nano-wires (SiNWs) were synthesized on silicon wafers by the chemical vapor deposition (CVD) technique. The morphology and structure of tiny SiNWs were analyzed by means of transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The results indicate that the tiny SiNWs were part-crystalline structure and were about 3 nm in minimal diameter. Based on the line shift of Raman spectra, the structure transform of the tiny SiNWs was discussed. The defect-inducing growth mechanism will probably provide a new method for the minimum of the one-dimensional nano-materials.
OS1503 Development of Highly Ordered Silicon Nanowire Array

Shuji NOTA,Yasuyuki MORITA,Yang JU

DOI: https://doi.org/10.1299/jsmemm.2014._os1503-1_

2014-01-01

Abstract:Characteristic of nanowire is gradually attracting many researchers with potential applications of nano-devices, nano-sensors, solar-cells and so on. This paper describes fabrication and evaluation of silicon nanowire array with the metal-assist chemical etching. To fabricate Si nanowire array, five steps are needed. First of all, Si wafer is cleaned and hydrophilization. Second, polystyrene spheres are coated on Si wafer by spin coater. Third, the arranged polystyrene sphere array is etched by reactive ion etching to reduce the diameter of the polystyrene spheres. Fourth, Au film is evaporated on the Si wafer of the arranged polystyrene to work as a catalyst. Fifth, the Si nanowire array is formed via wet etching by 4.6M HF and 0.44M H_2O_2 solution. After the wet etching, the Si nanowire array is dried by the supercritical drying method. After all, the highly ordered Si nanowire arrays are obtained with the diameter of 250-900 nm, the length of 0-12 μm and the density of 1.1×10^7-1.0×10^8 NWs/cm^2.
A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

JJ Niu,J Sha,ZH Liu,J Yu,ZX Su,Q Yang,DR Yang

DOI: https://doi.org/10.1109/sim.2005.1511409

2004-01-01

Abstract:A large-scale SiNWs with the diameter of /spl sim/20-30 nm and the length of tens of micrometers formed on silicon substrates using a novel evaporation of sulfides (sulphur and zinc sulfide) at /spl sim/1080/spl deg/C were synthesized; The source of SiNWs came from silicon wafers rather than silane gas as reported before. It was found that the tip of SiNWs contained sulfur, while the other positions of SiNWs did not. It is considered that the decomposition of SiS resulted in the formation of SiNWs. As referring to the oxygen-assisted growth model of SiNWs by evaporation of silicon oxide, a corresponding sulfide-assisted model was suggested.
Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Junjie Niu,Jian Sha,Deren Yang

DOI: https://doi.org/10.1016/j.physe.2004.01.013

2004-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:A large-scale crystalline silicon nanowires (SiNWs) with a diameter of ∼30nm and length of tens of micrometers on Al2O3 templates and silicon wafers were synthesized by the thermal evaporation of silicon monoxide (SiO). The SiNWs were measured by transmission electron microscopy, scanning electron microscopy, X-ray diffraction and Raman spectroscopy, respectively. It was pointed out that the SiNWs possessed the well crystalline structure. Therefore, it is considered that SiO could be used as Si sources to produce larger-scale SiNWs and crystalline SiNWs may grow from amorphous nuclei.
Array-orderly single crystalline silicon nano-wires

Junjie Niu,Jian Sha,Xiangyang Ma,Jin Xu,Deren Yang

DOI: https://doi.org/10.1016/S0009-2614(02)01731-1

IF: 2.719

2003-01-01

Chemical Physics Letters

Abstract:Array-orderly single crystal silicon nano-wires (SiNWs) using self-organized nano-holes of anodically oxidized aluminum were fabricated. By field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM), the well-orderly single crystal SiNWs arrays were observed. The interval of the SiNWs is excellent symmetrical and consentaneous. The diameter and the length are around 35 nm and 4 μm, respectively. Furthermore, the energy dispersive X-ray spectroscopy analysis (EDX) indicated that the SiNWs consist of silicon core and silicon oxide sheath mainly. The Raman scattering was also carried out to analyze the structure of the oriented SiNWs. Finally, the growth mechanism of the SiNWs was discussed.
Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

Dapeng Yu,Zhigang Bai,Yu Ding,Qingling Hang,Hongzhou Zhang,Jingjing Wang,Yinghua Zou,Wei Qian,GuangCheng Xiong,HeTian Zhou,Sunqi Feng

DOI: https://doi.org/10.1063/1.1825625

IF: 4

1998-01-01

Applied Physics Letters

Abstract:We report the large-scale synthesis of silicon nanowires (SiNWs) using a simple but effective approach, High purity SiNWs of uniform diameters around 15 nm were obtained by sublimating a hot-pressed silicon powder target at 1200 degrees C in a flowing carrier gas environment. The SiNWs emit stable blue light which seems unrelated to quantum confinement, but related to an amorphous overcoating layer of silicon oxide. Our approach can be used, in principle, as a general method for synthesis of other one-dimensional semiconducting, or conducting nanowires. (C) 1998 American Institute of Physics.
Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Hui Fang,Yin Wu,Jing Zhu

DOI: https://doi.org/10.4028/www.scientific.net/msf.610-613.604

2009-01-01

Materials Science Forum

Abstract:Wet chemical etching with dry metal deposition method has been developed to fabricate large-area aligned silicon nanowire (SiNW) arrays. The combination of nanoclusters Ag film with proper interconnection and interspaces (of about 20 nm thick), and proper temperature during etching (from 20 to 80 °C) is vital to successfully fabricating large-area uniform SiNW arrays. Raman and photoluminescence spectra of the SiNW arrays indicated their potential applications in chemical detection and optical devices ,respectively.
Scalable chemical synthesis of doped silicon nanowires for energy applications

Olga Burchak,Caroline Keller,Gérard Lapertot,Mathieu Salaün,Julien Danet,Yani Chen,Nedjma Bendiab,Brigitte Pépin-Donat,Christian Lombard,Jérôme Faure-Vincent,Anthony Vignon,David Aradilla,Peter Reiss,Pascale Chenevier

DOI: https://doi.org/10.1039/c9nr03749g

IF: 6.7

2019-11-28

Nanoscale

Abstract:A versatile, low-cost and easily scalable synthesis method is presented for producing silicon nanowires (SiNWs) as a pure powder. It applies air-stable diphenylsilane as a Si source and gold nanoparticles as a catalyst and takes place in a sealed reactor at 420 °C (pressure <10 bar). Micron-sized NaCl particles, acting as a sacrificial support for the catalyst particles during NW growth, can simply be removed with water during purification. This process gives access to SiNWs of precisely controlled diameters in the range of 10 ± 3 nm with a high production yield per reactor volume (1 mg cm-3). The reaction was scaled up to 500 mg of SiNWs without altering the morphology or diameter. Adding diphenylphosphine results in SiNW n-type doping as confirmed by ESR spectroscopy and EDX analyses. The measured SiNW doping level closely follows the initial dopant concentration. Doping induces both an increase in diameter and a sharp increase of electrical conductivity for P concentrations >0.4%. When used in symmetric supercapacitor devices, 1% P-doped SiNWs exhibit an areal capacity of 0.25 mF cm-2 and retention of 80% of the initial capacitance after one million cycles, demonstrating excellent cycling stability of the SiNW electrodes in the presence of organic electrolytes.
Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

JJ Niu,J Sha,DR Yang

DOI: https://doi.org/10.1016/j.physe.2004.05.002

IF: 3.369

2004-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Silicon nanowires (SiNWs) with a diameter of ∼20nm were synthesized by the thermal evaporation of sulfur powders on silicon wafers. The source of the SiNWs came from the silicon substrates. It is considered that the generated SiS compound assisted the formation of SiNWs. Finally, the Raman shift of SiNWs was discussed.
Engineering Island-Chain Silicon Nanowires Via a Droplet Mediated Plateau-Rayleigh Transformation

Zhaoguo Xue,Mingkun Xu,Yaolong Zhao,Jimmy Wang,Xiaofan Jiang,Linwei Yu,Junzhuan Wang,Jun Xu,Yi Shi,Kunji Chen,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1038/ncomms12836

IF: 16.6

2016-01-01

Nature Communications

Abstract:The ability to program highly modulated morphology upon silicon nanowires (SiNWs) has been fundamental to explore new phononic and electronic functionalities. We here exploit a nanoscale locomotion of metal droplets to demonstrate a large and readily controllable morphology engineering of crystalline SiNWs, from straight ones into continuous or discrete island-chains, at temperature <350 °C. This has been accomplished via a tin (Sn) droplet mediated in-plane growth where amorphous Si thin film is consumed as precursor to produce crystalline SiNWs. Thanks to a significant interface-stretching effect, a periodic Plateau-Rayleigh instability oscillation can be stimulated in the liquid Sn droplet, and the temporal oscillation of the Sn droplets is translated faithfully, via the deformable liquid/solid deposition interface, into regular spatial modulation upon the SiNWs. Combined with a unique self-alignment and positioning capability, this new strategy could enable a rational design and single-run fabrication of a wide variety of nanowire-based optoelectronic devices.
Application of Silicon Nanowires

Yang Feng,Ping Liang,Ziwen Xia,Hongyan Peng,Shihua Zhao

DOI: https://doi.org/10.2174/0115734137295190240321042642

IF: 1.513

2024-04-02

Current Nanoscience

Abstract:Abstract:: Silicon Nanowires (SiNWs), a novel category of nanomaterials, exhibit several outstanding properties, including superior transistor performance, quantum tunneling effects, and remarkable electrical and optical capabilities. These properties are expected to contribute significantly to the development of future nanodevices, such as sensors and optoelectronic components. The potential for device miniaturization with SiNWs is based on their ease of monocrystallization. This leads to a reduced rate of hole-electron complexes and their extensive specific surface area that promotes boundary effects, thereby diminishing conductivity. Characterized by unique structural attributes, SiNWs hold promise for a wide range of applications in various sectors. To date, multiple methods have been established for SiNW fabrication, including solgel, electrochemical, laser ablation, chemical vapor deposition, and thermal vapor deposition techniques. Subsequently, the focus has shifted to the application of SiNWs in electronics, energy, and biomedicine. SiNWs are instrumental in producing high-performance electronic devices, such as field-effect transistors, sensors, and memory units. They also exhibit outstanding photovoltaic properties, making them suitable for high-efficiency solar cell and photocatalyst production. Additionally, SiNWs are poised to make significant contributions to biomedicine, particularly in biosensors, drug delivery systems, and tissue engineering materials. This article provides a concise review of the current status of SiNWs in electronics, sensing devices, and solar cell applications, and their roles in high-performance transistors, biosensors, and solar cells. It concludes with an exploration of the challenges and prospects for SiNWs. In summary, the unique attributes of SiNWs establish them as a versatile nanomaterial with broad applicability. This review offers a comprehensive overview of SiNW research and theoretical insights that may guide similar studies. The insights into recent SiNW research presented here are intended to inform future applications and investigations involving these nanomaterials.

materials science, multidisciplinary,nanoscience & nanotechnology,biotechnology & applied microbiology
Super-wetting, wafer-sized silicon nanowire surfaces with hierarchical roughness and low defects

K. Meissner,Ana Egatz-Gómez,Christopher Levert,R. Majithia

DOI: https://doi.org/10.1039/C2RA22267A

2012-10-29

Abstract:This paper reports the fabrication of wafer-sized silicon nanowire (SiNW) surfaces using a modified metal-assisted chemical etching method. The complete fabrication and coating process can be performed in less than three hours, is easily size-scalable, and produces surfaces with very low surface defects, complex, hierarchical surface roughness, and large nanowire height. These surfaces exhibit extreme wettabilities depending on surface coating: oxidized SiNW surfaces are superhydrophilic, while surfaces coated with a fluorinated hydrocarbon are superhydrophobic. The wetting and morphological properties of SiNW surfaces made with one and two etches of different duration are characterized vis-a-vis their effect on water drop mobility. Compared to a single etch process, a double etch followed by coating with a fluorinated hydrocarbon more efficiently produces SiNW surfaces with high contact angles on which microliter-sized water drops roll-off at approximately 0° tilt angle. Due to their very low friction, extreme wetting properties, ease of fabrication, low-cost, and large-sizes, these SiNW surfaces may be advantageous in microfluidic devices, bioanalysis systems sensitive to cross-contamination that require disposable substrates, and other applications.

Engineering,Materials Science
Tough sheets of nanowires produced floating in the gas phase

Richard S. Schäufele,Miguel Vazquez-Pufleau,Juan J. Vilatela

DOI: https://doi.org/10.1039/D0MH00777C

2020-12-01

Abstract:Assembling nanostructured building blocks into network materials unlocks macroscopic properties inaccessible with monolithic solids, notably toughness and tolerance to electrochemical alloying. A method is reported for large-scale, continuous synthesis of silicon nanowires (SiNWs) suspended in the gas phase and their direct assembly into macroscopic sheets. Performing gas-phase growth of SiNWs through floating catalyst chemical vapor deposition using an aerosol of gold nanoparticles eliminates the need for substrates, increasing the growth rate by a factor of 500, reaching 1.4 $\mu$m s$^{-1}$ and leading to very long SiNWs. The combined high aspect ratio ($>$210) and large concentration of SiNWs in the gas-phase (1.5 x 107 cm$^{-3}$) enable the formation of macroscopic solids solely composed of percolated SiNWs, such as free-standing sheets and continuous metre-long SiNW tapes. Sheet samples of small diameter SiNWs ($<$25 nm) combine extraordinary flexibility in bending, tensile ductility around 3%, and over 50-fold higher toughness than Si-based anodes (fracture energy 0.18 $\pm$ 0.1 J g$^{-1}$). This synthesis and assembly process should be applicable to virtually any one-dimensional inorganic nanomaterial producible by thermochemical methods.

Materials Science

Silicon nanowire aqueous dispersions for processing into macroscopic network materials

Silicon nanowire aqueous dispersions for processing into macroscopic network materials

Ultrafast growth of single-crystalline Si nanowires

Metallization of Silicon Nanowires and Sers Response from A Single Metallized Nanowire

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Dispersion, Refinement, and Manipulation of Single Silicon Nanowires

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Tiny silicon nano-wires synthesis on silicon wafers

OS1503 Development of Highly Ordered Silicon Nanowire Array

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Array-orderly single crystalline silicon nano-wires

Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

Fabrication and Properties of Large-Area Silicon Nanowire Arrays

Scalable chemical synthesis of doped silicon nanowires for energy applications

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Engineering Island-Chain Silicon Nanowires Via a Droplet Mediated Plateau-Rayleigh Transformation

Application of Silicon Nanowires

Super-wetting, wafer-sized silicon nanowire surfaces with hierarchical roughness and low defects

Tough sheets of nanowires produced floating in the gas phase