Abstract:With the rapid development of semiconductor technology, the reduction in device operating voltage and threshold voltage has made integrated circuits more susceptible to the effects of particle radiation. Moreover, as process sizes decrease, the impact of charge sharing effects becomes increasingly severe, with soft errors caused by single event effects becoming one of the main causes of circuit failures. Therefore, the study of sensitivity evaluation methods for integrated circuits is of great significance for promoting the optimization of integrated circuit design, improving single event effect experimental methods, and enhancing the irradiation reliability of integrated circuits. In this paper, we first established a device model for the charge sharing effect and simulated it under reasonable conditions. Based on the simulation results, we then built a neural network model to predict the charge amounts in primary and secondary devices. We also propose a comprehensive automated method for calculating soft errors in unit circuits and validated it through TCAD simulations, achieving an error margin of 2.8–4.3%. This demonstrated the accuracy and effectiveness of the method we propose.

What problem does this paper attempt to address?

### Problems Addressed by the Paper The paper aims to address the issue of evaluating the vulnerability of semiconductor integrated circuits in radiation environments, particularly in aerospace applications. With the advancement of semiconductor technology, the operating voltage and threshold voltage of devices have decreased, making integrated circuits more susceptible to particle radiation. Additionally, as process dimensions shrink, the charge-sharing effect becomes increasingly severe, and soft errors caused by single-event effects (SEE) have become one of the main reasons for circuit failure. The paper proposes an automated method to predict the radiation-induced vulnerability of unit integrated circuits. The specific steps are as follows: 1. **Device Modeling**: Using TCAD software to simulate 28-nanometer bulk silicon CMOS process devices, considering various influencing factors (such as quantum effects, high-K materials, etc.) to ensure the accuracy and reliability of the model. 2. **Neural Network Modeling**: Based on TCAD simulation results, a BP neural network model is established to predict the amount of charge in primary and secondary devices, thereby obtaining charge data under complex conditions for subsequent automated evaluation processes. 3. **Automated Calculation Method**: Using the Python programming language to extract and parse relevant layout files and netlist information, and calling the SPICE simulator for fault injection simulation, the soft error of unit integrated circuits is calculated through flip cross-section and heavy ion differential LET spectrum, achieving a fully automated process. 4. **Validation Work**: The effectiveness of the method is verified through TCAD simulations, demonstrating its accuracy in evaluating the radiation-induced vulnerability of integrated circuits. In summary, the paper is dedicated to developing an efficient method to assess the sensitivity of integrated circuits to radiation, to optimize the design of aerospace integrated circuits, improve single-event effect experimental methods, and enhance the radiation reliability of integrated circuits.

A Method for Automatically Predicting the Radiation-Induced Vulnerability of Unit Integrated Circuits

Worst-case Power Integrity Prediction Using Convolutional Neural Network.

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

A Fast Method to Estimate Through-Bump Current for Power Delivery Verification

A new prediction methodology for electromigration-induced solder degradation in a WL-CSP system

SSRESF: Sensitivity-aware Single-particle Radiation Effects Simulation Framework in SoC Platforms based on SVM Algorithm

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

Radiated Emissions Prediction of an Electronic Packaging Based on Near-field Scanning

Efficient EMI Analysis and Self-Shielding Design Method for Pin Map of System-in-Package

EMI Radiation Prediction and Structure Optimization of Packages by Deep Learning

An Effective Equivalent Radiation Source Based on Near-field Scanning for Electromagnetic Interference Estimation

Self-heating Aware EM Reliability Prediction of Advanced CMOS Technology by Kinetic Monte Carlo Method

A New Analytical Approach to Evaluate the Radiation Sensitivity of Circuits Implemented on SRAM-Based FPGAs

Survey on Reliability Estimation in Digital Circuits

Evaluation of Fault Mitigation Techniques Based on Approximate Computing Under Radiation

A Novel Layout-Based Single Event Transient Injection Approach to Evaluate the Soft Error Rate of Large Combinational Circuits in Complimentary Metal-Oxide-Semiconductor Bulk Technology

Single-Event Multiple-Transient Characterization and Mitigation via Alternative Standard Cell Placement Methods

Unified Self-Heating Effect Model for Advanced Digital and Analog Technology and Thermal-Aware Lifetime Prediction Methodology

Advances in CMOS Image Sensors and Transistors Leveraging Stochastic Nanomagnets: A Comprehensive Review

A Multi-objective Optimization Framework to Design Soft-Error-Immune Circuit

Algorithm prediction of single particle irradiation effect based on novel TFETs