A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices
Cheng-Xin Xue,Yen-Cheng Chiu,Ta-Wei Liu,Tsung-Yuan Huang,Je-Syu Liu,Ting-Wei Chang,Hui-Yao Kao,Jing-Hong Wang,Shih-Ying Wei,Chun-Ying Lee,Sheng-Po Huang,Je-Min Hung,Shih-Hsih Teng,Wei-Chen Wei,Yi-Ren Chen,Tzu-Hsiang Hsu,Yen-Kai Chen,Yun-Chen Lo,Tai-Hsing Wen,Chung-Chuan Lo,Ren-Shuo Liu,Chih-Cheng Hsieh,Kea-Tiong Tang,Mon-Shu Ho,Chin-Yi Su,Chung-Cheng Chou,Yu-Der Chih,Meng-Fan Chang
DOI: https://doi.org/10.1038/s41928-020-00505-5
IF: 33.255
2020-12-14
Nature Electronics
Abstract:<p>Nature Electronics, Published online: 14 December 2020; <a href="https://www.nature.com/articles/s41928-020-00505-5">doi:10.1038/s41928-020-00505-5</a></p>Commercial complementary metal–oxide–semiconductor and resistive random-access memory technologies can be used to create multibit compute-in-memory circuits capable of fast and energy-efficient inference for use in small artificial intelligence edge devices.
engineering, electrical & electronic