Optical properties of LaFeO3 films studied using spectroscopic ellipsometry

Jae Jun Lee,Da Hee Kim,Eun Ji Kim,Hosun Lee

DOI: https://doi.org/10.1007/s40042-024-01021-x

2024-03-02

Journal of the Korean Physical Society

Abstract:LaFeO 3 film is an intermediate charge transfer/Mott–Hubbard insulator. LaFeO 3 thin films were grown on SrTiO 3 substrates using radio frequency magnetron sputtering deposition method at 500 °C. After growth, the LaFeO 3 thin films were annealed in air at 800 °C for 2 h. The LaFeO 3 films grown on SrTiO 3 substrates showed atomically sharp interfaces even though they were grown using a sputtering deposition. LaFeO 3 films show orthorhombic structures according to X-ray diffraction measurements. We obtained the dielectric functions ( ε = ε 1 + ε 2 ) of the thin films using spectroscope ellipsometry and obtained the optical gap energies from the absorption coefficients ( α = 4 πk/λ ). The optical gap energy of LaFeO 3 thin films was determined to be an indirect gap energy of 2.21 eV, and a direct gap energy of 2.73 eV. Forbidden direct gap energy was estimated to be 1.94 eV for LaFeO 3 thin films. The critical point (CP) energies were determined using the second-order energy derivative spectra of the dielectric functions. The optical gap energies and the CP energies were compared to band structure calculations in the literature.

physics, multidisciplinary