Abstract:Quaternary chalcogenide Cu 2 CoSnS 4 (CCTS) thin films were successfully prepared by spray pyrolysis on glass substrates in varying the precursor concentration and the thiourea volume. The effects of the precursor concentration and the thiourea volume on the formation of the CCTS phase were systematically investigated by X-ray diffraction, Raman spectroscopy, Energy-Dispersive X-ray Spectroscopy. The electrical resistivity at room temperature has been measured by the four probes method. It is shown that the crystallization of the stannite CCTS phase depends on both the precursor concentration and thiourea volume. The minimum volume of thiourea required to crystallize the CCTS phase depends on the precursor concentration, i.e. the CCTS crystallization needs higher volume of thiourea at low precursor concentration. For higher precursor concentration, the CCTS is poorly crystallized with the presence of secondary phases such as CuS 2 , CoS 2 , and CuCo 2 S 4 , while the crystallization domain is relatively large. The CCTS well crystallizes only in a narrow range of precursor concentration and thiourea volume. The relatively poor crystallization combined with the presence of secondary phases are harmful for the optical and electrical features of the CCTS film. Besides, optical transmission measurements of the optimized film showed an optical gap of 1.7 eV (~ 730 nm) and an absorption coefficient included between 10 4 and 10 5 cm −1 in the visible solar range. Furthermore, the optimized stannite CCTS films are compact exhibiting a relatively rough and granular surface due to the formation of copper sulfide nodules. The electrical resistivity of the optimized CCTS film is about 0.4 10 –2 Ω cm. These results suggest that the deposited films fit the requirements of absorbing layer in solar cells. The diode composed of Au/Cu 2 CoSnS 4 /SnO 2 films was investigated with current–voltage ( I – V ) measurements performed under dark and bright conditions. The series resistance, saturation current and ideality factor of typical diode is estimated to be 689 Ω, 1.15 10 –5 A and 3, respectively.

Electrodeposition mechanism of Cu 2 CoSnS 4 thin films onto FTO-coated glass: Effect of some additives

Pulsed potential co-electrodeposition of Cu2CoSnS4 absorber layer on fluorinated tin oxide (FTO)-coated glass

Abnormal Behaviors in Electrical Transport Properties of Cobalt-Doped Tin Oxide Thin Films

Electrodeposition of Cu2FeSnS4 thin films for solar cell applications: mechanism of deposition and influence of Fe2+ concentration

Synthesis, Growth and Characterization of Cu2CoSnS4 Thin Films via Thermal Evaporation Method

Electrodeposition of Cu2NiSnS4 absorber layer on FTO substrate for solar cell applications

In-Depth Study of Chemically Electrodeposited Cuprous Oxide (Cu2O) thin Films on ITO Glass

Structural, Optical and Optoelectrical Properties of CuAlSnS 4 Thin Films

Physical Properties of Cu2SnS3 Thin Films Prepared by Sulfurization of Co-Sputtered Cu-Sn Metallic Precursors

Synthesis of Cu2CoSnS4 chalcogenide thin films by spray pyrolysis and efficient Au/p-CCTS/n-SnO2 diode for cells solar applications

Hydrothermal synthesis of Cu 2 CoSnS 4 nanoparticles: characterization and their applications of electrochemical, antibacterial and photocatalytic performances

Electrodeposition of Sno2 Thin Films from Aqueous Tin Sulfate Solutions

Effect of Conductive Substrate (working Electrode) on the Morphology of Electrodeposited Cu2O

Co-electrodeposited Ag2SnS3/Mo thin films: optical and electrochemical study: DFT complement

Structural, Optical and Magnetic Properties of Cu2NiSnS4 Thin Films Deposited by Facile One-Step Electrodeposition

Synthesis and characterization of photoactive material Cu2NiSnS4 thin films

Research on CuInS2 Thin Films Prepared by One-step Electrodeposition

Structural, Morphological, and Magnetic Properties of Electrodeposited CoNi Thin Films on the FTO Substrate

Influence of Cu doping on the functionality of spray coated SnS 2 thin films and its photocatalytic degradation of dyes and antibacterial activity

Formation of Cu2SnS3 thin film by the heat treatment of electrodeposited SnS–Cu layers

Effects and Mechanism of ITO and ZnO Substrate on Surface Morgraphology and Structural of Electrodeposited Cu2O Thin Films