Abstract:Nitrogen-doped CVD diamond treated with electron irradiation and subsequent annealing at temperatures from 860 to 1900 °C was studied using fluorescence imaging, optical absorption and photoluminescence. It was found that nitrogen impurity produces many optical centers active throughout the infrared and visible spectral ranges. The most prominent of them active in IR spectral range are the centers related to nitrogen–hydrogen complexes. They produce absorption lines at 2827, 2874, 2906, 2949, 2990, 3031, 3107, 3123 and 3310 cm−1. Two characteristic absorptions at wavenumbers 1293 cm−1 and 1341 cm−1 were tentatively ascribed to a modified form of nitrogen A-aggregates. In the visible and near IR spectral ranges, characteristic nitrogen-related centers have zero-phonon lines (ZPLs) at 457, 462, 489, 498, 722.5, 852.5, 865.5, 868.5, 908, 921.5 and 924.5 nm. Some of them, e.g. 457, 462 and 498 nm centers, are unique of CVD diamond. It has been confirmed that the brightest pink color of electron-irradiated nitrogen-doped CVD diamond is produced by annealing at temperatures about 1000 °C. Annealing at temperatures over 1600 °C destroys the irradiation-induced pink color. It was found that the center 489 nm is a major absorption feature in the visible spectral range of electron-irradiated, nitrogen-doped CVD diamond. Green color of electron-irradiated, nitrogen-doped CVD diamond is caused by combined absorption of GR1 center and 489 nm center. It has been confirmed that NV defects produced in CVD diamond during growth are very temperature stable. They survive heating at temperatures at least 2000 °C. In contrast, NV defects produced by irradiation may anneal out at temperatures as low as 1600 °C. This much lower thermal stability of the radiation-induced NV defects is the result of their interaction with other radiation defects produced in their vicinity. A conclusion has been made that in nitrogen-doped CVD diamonds nitrogen atoms may form clusters. These clusters are probably the origin of the broad band luminescence at wavelengths 360, 390, 535 and 720 nm and a strong broadening of ZPLs of many optical centers.

The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions

Enhancement of concentration of XeV and GeV centers in nanocrystalline diamond through He+ irradiation

Radiation Damage Effects on Optical, Electrical, and Thermophysical Properties of CVD Diamond Films

Optical Defects and Their Depth Penetration in 200 Kev Electron Irradiated IIa Diamond

Annealing And Lateral Migration Of Defects In Iia Diamond Created By Near-Threshold Electron Irradiation

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Carrier Recombination And Diffusion In High-Purity Diamond After Electron Irradiation And Annealing

Surface defects created by 20keV Xe ion irradiation of Ge(111)

Defect transformations in nitrogen-doped CVD diamond during irradiation and annealing

Irradiation damage in xenon-irradiated α-Al2O3 before and after annealing

Formation And Annihilation Of Nanocavities During Kev Ion Irradiation Of Ge

Optical Properties of Implanted Xe Color Centers in Diamond

Charge transfer effects, thermo- and photochromism in single crystal CVD synthetic diamond

Probing the Nanostructure of Neutron-Irradiated Diamond Using Raman Spectroscopy

Primary irradiation damages and tribological property evolutions of heavy-ion radiated microcrystalline diamond films grown by MPCVD

Thermal Annealing of C Ion Irradiation Defects in Nuclear Graphite Studied by Positron Annihilation

Quasi-saturation Dependent Wear Resistance of Nanocrystalline Diamond Films under Heavy-Ion Irradiation with Large Displacement Damage

Impacts of Nitrogen Concentration and Electron Irradiation Fluence on the Formation of Nitrogen-Vacancy Defects in Diamond

Infrared Optical Properties of Diamond Films and Electrical Properties of CVD Diamond Detectors

Modeling and X-ray Analysis of Defect Nanoclusters Formation in B4C under Ion Irradiation

Diamond-defect engineering of NV- centers using ion beam irradiation