Abstract:In electronic bipolar resistive switching (eBRS), the electron trapping and detrapping at the defect sites within the switching layer, such as the highly defective TiO1.7 in this study, constitute the switching mechanism. It is an appealing candidate solution to the nonuniformity issue of resistive switching memory. However, TiO1.7-based eBRS has suffered from a lack of endurance and retention. In this study, a 7 nm-thick stoichiometric TiO2 layer is interposed between an Al bottom electrode and a 50 nm-thick TiO1.7 layer, which is in contact with an Al top electrode. Despite the minimal structural modification, improvements in the electrical performance were substantial. The off-to-on state resistance ratio of 20 and the resistance values could be retained up to 30 000 direct current sweep cycles and 106 alternating current pulse switching cycles. Data retention also significantly improves. Moreover, the device is electroforming-free and shows fully area-type switching characteristics. Such notable improvements are attributed to the favorable energy band structure of the Al/TiO1.7/TiO2/Al structure. The device shows almost linear potentiation and depression characteristics after the repeated pulse voltage applications, which significantly improves the accuracy of the neural network, the synapses of which are composed of the Al/TiO1.7/TiO2/Al memory cells.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c09436.Endurance performance with Vset@-3 V and Vreset@3 V of the AT1.7A and AT1.7T2A devices under I–V sweep; SCLC fitting results from the double-log scale for different repetition cycles of the AT1.7T2A device; electrical conduction behaviors in the narrow voltage bias region measured from 300 to 350 K; HRS of the sample after the first, 200th, 4000th, and 10 000th I–V sweep; the Arrhenius-type plots in the corresponding I–V curves, from which the activation energy (Ea) could be estimated as a function of the applied voltage; retention test of the AT1.7T2A sample performed at 200, 225, and 250 °C, respectively; PFTUNA images of the AT1.7A devices of LRS before baking and HRS before baking; KPFM surface potential distribution images of the pristine states of the AT1.7A and AT1.7T2A devices; KPFM results of the electron-trapped (LRS) and detrapped (HRS) states of the AT1.7A structure; KPFM results of the electron-trapped (LRS) and detrapped states (HRS) of the AT1.7A structure after baking for 1000 s at 85 °C; multilevel current values of the AT1.7T2A structure using the negative sweep mode for potentiation with an increasing (absolutely increasing) stop voltage (inset: −2 V stop voltage) and using the positive sweep mode for depression with an increasing stop voltage (inset: 1.6 V stop voltage); measured conductance changes of the AT1.7T2A structure after application of different voltage pulse widths and voltage amplitudes (PDF)This article has not yet been cited by other publications.

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