Abstract:Defects in MoS2 defects are tailored via pressure‐controlled CVD to achieve diverse functionalities. Low‐pressure CVD growth yields sulfur‐vacancy rich MoS2, enhancing photoresponsivity, FET characteristics and electrocatalytic activity for HER, while atmospheric pressure CVD creates MoS2 with oxygen‐passivated defects leading to superior photoluminescence. This work demonstrates a single‐step CVD approach for defect engineering in MoS2, with potential applicability to other monolayer 2D materials. Molybdenum disulfide (MoS2), a two‐dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS2, remains a notable challenge. Here, an in‐situ defect engineering approach for monolayer MoS2 using a pressure‐dependent chemical vapor deposition (CVD) process is presented. Monolayer MoS2 grown in a low pressure CVD conditions (LP‐MoS2) produces sulfur vacancy (Vs) induced defect‐rich crystals primarily attributed to the oxygen‐deficient growth conditions. Conversely, atmospheric pressure CVD‐grown MoS2 (AP‐MoS2) passivates these defects with oxygen from ambient conditions. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP‐MoS2 shows a drastically enhanced photoluminescence, which is significantly quenched in LP‐MoS2 attributed to in‐gap electron donor states induced by the Vs defects. However, the n‐doping induced in LP‐MoS2 generates enhanced photoresponsivity and detectivity in fabricated photodetectors compared to the AP‐MoS2‐based devices. Defect‐rich LP‐MoS2 outperforms AP‐MoS2 as channel layers of field‐effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single‐step CVD approach for in situ defect engineering in monolayer MoS2 and presents a pathway to control defects in other monolayer 2D materials.

Time evolution of the defect states at the surface of MoS2

Unraveling States, Energetics, and Kinetics of Adsorbing Oxygen Species above MoS2

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Oxidation-induced modulation of photoresponsivity in monolayer MoS2 with sulfur vacancies

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Adsorption of Mo and O at S-vacancy on ReS2 surface of ReS2/MoTe2 vdW heterointerface

Defects, band bending and ionization rings in MoS2

Understanding the Air Stability of Defective MoS2 and the Oxidation Effect on the Surface HER Activity

Probing the Relationship between Defects and Enhanced Mobility in MoS2 Monolayers Grown by Mo Foil

Strain Engineering the Behaviors of Small Molecules over Defective MoS2 Monolayers in the 2H and 1T′ Phases

Two-dimensional electronic transport and surface electron accumulation in MoS2

Oxygen Driven Defect Engineering of Monolayer MoS2 for Tunable Electronic, Optoelectronic, and Electrochemical Devices

Probing the edge-related properties of atomically thin MoS2 at nanoscale

Spontaneous doping of the basal plane of MoS2 single-layers through oxygen substitution under ambient conditions

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Spectroscopic Investigation of Defects Mediated Oxidization of Single-Layer MoS2

Defect Engineering of MoS2 for Room-Temperature Terahertz Photodetection.

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2