Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Defect Engineering of MoS2 for Room-Temperature Terahertz Photodetection.

Room-Temperature Ultrabroadband Photodetection with MoS2 by Electronic-Structure Engineering Strategy

High-Performance Photodetectors Based on MoTe2–MoS2 van der Waals Heterostructures

A fast 2D MoS2 photodetector with ultralow contact resistance

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Visible To Near-Infrared Photodetectors Based On Mos2 Vertical Schottky Junctions

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

PtTe2 -Based Type-II Dirac Semimetal and Its Van Der Waals Heterostructure for Sensitive Room Temperature Terahertz Photodetection.

Amorphous MoS2 Photodetector with Ultra-Broadband Response

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide

Probing the edge-related properties of atomically thin MoS2 at nanoscale

Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation

High-Performance Photovoltaic Detector Based on MoTe 2 /MoS 2 Van der Waals Heterostructure.

Modification of Thermal Transport in Few-Layer MoS2 by Atomic-Level Defect Engineering.

High response and broadband photodetection by monolayer MoSe2 with vanadium doping and Mo vacancies

Self-powered Broadband Photodetector on Flexible Substrate from Visible to Near Infrared Wavelength

High-performance photodetector and its optoelectronic mechanism of MoS2/WS2 vertical heterostructure

Room temperature photosensitive ferromagnetic semiconductor using MoS2

One-pot Liquid-Phase Synthesis of MoS$_2$-WS$_2$ van der Waals Heterostructures for Broadband Photodetection

Type-I PtS2/MoS2 van der Waals Heterojunction with Tunable Photovoltaic Effect and High Photosensitivity