Yiru Zhu,Juhwan Lim,Zhepeng Zhang,Yan Wang,Soumya Sarkar,Hugh Ramsden,Yang Li,Han Yan,Dibya Phuyal,Nicolas Gauriot,Akshay Rao,Robert L. Z. Hoye,Goki Eda,Manish Chhowalla
Abstract:Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this work, we provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS(2) by annealing at 600 °C in an argon/hydrogen (95%/5%) atmosphere. Synchrotron X-ray photoelectron spectroscopy shows that a Mo 3d(5/2) core peak at 230.1 eV emerges in the annealed MoS(2) associated with nonstoichiometric MoS(x) (0 < x < 2), and...
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
What problem does this paper attempt to address?
### Problems the paper attempts to solve
The paper aims to solve how to introduce sulfur vacancies in two - dimensional (2D) molybdenum disulfide (MoS₂) by controllable means and study the influence of these sulfur vacancies on the photoluminescence (PL) properties of the material. Specifically, the authors focus on the following issues:
1. **Generation of sulfur vacancies**: How to controllably introduce sulfur vacancies in monolayer MoS₂ through annealing treatment and verify the existence and density of these sulfur vacancies.
2. **Defect - state - mediated luminescence at room temperature**: Explore whether sulfur vacancies can induce defect - state - mediated photoluminescence (LXD peak) at room temperature, and this kind of luminescence is usually more common at low temperatures. The authors are particularly concerned about whether this luminescence can be observed at room temperature when the sulfur vacancy density is in the range of \(10^{13}\, \text{cm}^{-2} < n_d < 10^{15}\, \text{cm}^{-2}\).
3. **Regulation of luminescence properties**: Study the influence of temperature and excitation power on local luminescence properties, especially the change of luminescence lifetime revealed by time - resolved photoluminescence measurements.
4. **Sulfur vacancy passivation**: Explore how to passivate sulfur vacancies by sulfur vapor annealing treatment, thereby restoring the original optical properties of the material, and compare the optical performance differences of samples before and after passivation.
5. **Application prospects**: Through the above research, provide technical means for controllably introducing and passivating sulfur vacancies in large - area transition metal dichalcogenide (TMDs) films in the future, and then may realize the application of functional devices.
### Analysis of specific problems
- **Sulfur vacancy generation**:
- The authors successfully introduced sulfur vacancies by annealing monolayer MoS₂ at 600°C in an argon - hydrogen mixed gas (Ar/H₂, 95%/5%).
- The existence of sulfur vacancies was confirmed by synchrotron X - ray photoelectron spectroscopy (XPS) and Raman spectroscopy, and its density was measured to be approximately \(1.8\times 10^{14}\, \text{cm}^{-2}\).
- **Defect - state - mediated luminescence at room temperature**:
- At room temperature, the authors observed a defect - state - mediated luminescence peak (LXD peak) located at approximately 1.72 eV, which is usually only observable at low temperatures (≤77 K).
- Time - resolved PL measurements show that the luminescence lifetime of the LXD peak is longer than that of band - edge excitons, which are approximately 2.44 ns (8 K) and approximately 428 ps (300 K) respectively.
- **Regulation of luminescence properties**:
- As the annealing time increases, the intensity of the LXD peak first increases and then decreases, and the optimal annealing time is 30 minutes.
- Power - dependence measurements show that at a lower sulfur vacancy density, the LXD peak exhibits a linear dependence, while at a higher density it exhibits a sub - linear behavior.
- **Sulfur vacancy passivation**:
- By annealing in sulfur vapor, sulfur vacancies can be passivated, making the LXD peak disappear and at the same time restoring the luminescence properties of A excitons and negative triplets (A⁻ trion).
- Further vacuum annealing treatment can remove weakly adsorbed sulfur atoms and reduce electron doping, further improving the optical performance of the material.
### Conclusion
By controlling the annealing temperature, time and environment, the authors successfully and reproducibly generated sulfur vacancies in 2D MoS₂ and studied the influence of these sulfur vacancies on the photoluminescence properties of the material. The results show that sulfur vacancies can induce defect - state - mediated luminescence at room temperature, and this kind of luminescence has a long luminescence lifetime. In addition, through sulfur vapor passivation treatment, sulfur vacancies can be effectively passivated and the original optical properties of the material can be restored. These research results provide technical means for controllably introducing and passivating sulfur vacancies in large - area TMDs films in the future, and are expected to be applied to the development of functional devices.