Abstract:Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS2) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS2, presenting a useful way to engineer the performance of MoS2. The mechanisms by which lattice defects affect the MoS2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS2 electronic structure. We fabricated single-layer MoS2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO2 as substrates and created defects in MoS2 by ion irradiation. We assessed how these defects and substrates affect the electronic structure of MoS2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS2 due to charge transfer at the interface. Furthermore, the reduction state of CeO2 as an oxide substrate affects the interface charge transfer with MoS2. The irradiated MoS2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS2, demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS2 and show the importance of defect engineering in tuning the functionalities of MoS2 and other TMDs in electronics, optoelectronics, and electrochemistry.

Adsorption of Mo and O at S-vacancy on ReS2 surface of ReS2/MoTe2 vdW heterointerface

Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties

Time evolution of the defect states at the surface of MoS2

Direct Cation Exchange in Monolayer MoS2 Via Recombination-Enhanced Migration

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Electronic Structure and Optical Properties of Monolayer $ReS_2$ with Defect Controlled by Strain Engineering

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Stability of charged sulfur vacancies in 2D and bulk MoS$_2$ from plane-wave density functional theory with electrostatic corrections

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Strain Engineering the Behaviors of Small Molecules over Defective MoS2 Monolayers in the 2H and 1T′ Phases

Electronic and magnetic properties of single chalcogen vacancies in MoS$_2$/Au(111)

Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2 /Graphene Heterostructures.

Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2

Theoretical and experimental investigation of vacancy-based doping of monolayer MoS$_2$ on oxide

Charge State-Dependent Symmetry Breaking of Atomic Defects in Transition Metal Dichalcogenides

Excitonic Effects in the Linear and Nonlinear Optical Response of Rhenium Disulfide Regulated by Re Vacancy

Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2

First-principles Study of Vacancy Defects at Interfaces Between Monolayer MoS2 and Au

Defect Induced Gap States in Monolayer Mos2 Control the Schottky Barriers of Pt-Mmos(2) Interfaces

Interfacial Defect Engineering on Electronic States and Electrical Properties of MoS2/metal Contacts

Understanding and predicting adsorption energetics on monolayer transition metal dichalcogenides