Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2

Kyle T. Munson,Riccardo Torsi,Fatimah Habis,Lysander Huberich,Yu-Chuan Lin,Yue Yuan,Ke Wang,Bruno Schuler,Yuanxi Wang,John B. Asbury,Joshua A. Robinson

2024-01-04

Abstract:Substitutionally doped transition metal dichalcogenides (TMDs) are the next step towards realizing TMD-based field effect transistors, sensors, and quantum photonic devices. Here, we report on the influence of Re concentration on charge doping and defect formation in MoS2 monolayers grown by metal-organic chemical vapor deposition. Re-MoS2 films can exhibit reduced sulfur-site defects; however, as the Re concentration approaches 2 atom%, there is significant clustering of Re in the MoS2. Ab Initio calculations indicate that the transition from isolated Re atoms to Re clusters increases the ionization energy of Re dopants, thereby reducing Re-doping efficacy. Using photoluminescence spectroscopy, we show that Re dopant clustering creates defect states that trap photogenerated excitons within the MoS2 lattice. These results provide insight into how the local concentration of metal dopants affect carrier density, defect formation, and exciton recombination in TMDs, which can aid the development of future TMD-based devices with improved electronic and photonic properties.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the influence of rhenium (Re) doping concentration on charge doping and defect formation in monolayer molybdenum disulfide (MoS₂). Specifically, the paper explores how different concentrations of Re doping affect the structural defects, charge carrier density and photoluminescence properties of MoS₂. The study found that when the Re doping concentration is low, it can effectively reduce the sulfur vacancy defects in MoS₂ and achieve n - type doping; however, when the Re doping concentration exceeds about 1 atomic percent, Re atoms begin to aggregate in MoS₂, which not only reduces the effect of n - type doping, but also generates new defect states. These defect states can capture photogenerated excitons, resulting in enhanced emission under a wide bandgap. Through these studies, the paper provides important insights for understanding and controlling the doping effect in two - dimensional transition metal chalcogenides (TMDs), which is of great significance for the development of new electronic and optoelectronic devices based on TMDs.