Abstract:Nowadays neuromorphic computing is regarded as one of the most promising solutions to the Von Neumann bottleneck due to its high intelligence and low energy consumption. The development of neuromorphic computing critically depends on synaptic devices, which simulate biological synapses in neural systems. The incorporation of light into synaptic devices has been recently inspired by the exciting development of optogenetics in neuroscience. Although optically stimulated synaptic devices with electrical output have been realized, the use of light as the output of synaptic devices under electrical stimulation has not been demonstrated. This may impede the full optoelectronic integration of artificial neural systems for neuromorphic computing. In this talk I shall introduce our recent work on using light-emitting silicon nanocrystals (Si NCs) [1] to fabricate electroluminescent synaptic devices [2,3]. These devices exhibit a series of important synaptic functionalities, including paired-pulse facilitation (PPF), transition from short-term plasticity (STP) to long-term plasticity (LTP) and spike-timing-dependent plasticity (STDP). In the meantime, logic functions such as "AND", "OR", "NAND" and "NOR" can also be realized by using these electroluminescent synaptic devices. References Y. Ni, S. Zhou, S. Y. Zhao, W. B. Peng, D. Yang and X. D. Pi, Silicon nanocrystals: unfading silicon materials for optoelectronics, Materials Science & Engineering R 138, 85-117 (2019). Y. Zhao, Y. Wang, W. Huang, H. Jin, P. W. Huang, H. Wang, K. Wang, D. S. Li, M. S. Xu, D. Yang and X. D. Pi, Developing near-infrared quantum-dot light-emitting diodes to mimic synaptic plasticity, Science China Materials 62, 1470–1478 (2019). Y. Zhao, Z. Y. Ni, H. Tan, Y. Wang, H. Jin, T. X. Nie, M. S. Xu, X. D. Pi and D. Yang, Electroluminescent synaptic devices with logic functions, Nano Energy 54, 383-389 (2018).

A light-influenced memristor based on Si nanocrystals by ion implantation technique

Crystal That Remembers: Several Ways to Utilize Nanocrystals in Resistive Switching Memory

Perovskite-Enhanced Silicon-Nanocrystal Optoelectronic Synaptic Devices for the Simulation of Biased and Correlated Random-Walk Learning.

Hybrid Channel Induced Forming-Free Performance in Nanocrystalline-Si:H/a-sinx:h Resistive Switching Memory.

Nanocrystalline Si Pathway Induced Unipolar Resistive Switching Behavior from Annealed Si-rich SiNx/SiNy Multilayers

(Invited) Silicon Nanocrystals for Optoelectronic Synaptic Devices

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN<sub>x</sub>:H Resistive Switching Memory by the Transient Current

Tracing the Si Dangling Bond Nanopathway Evolution ina-SiNx:H Resistive Switching Memory by the Transient Current

Light-activated memristor by Au-nanoparticle embedded HfO$_2$-bilayer/p-Si MOS device

Light-controlled stateful reconfigurable logic in a carbon dot-based optoelectronic memristor

The Development of Nanometer Solid State Storage Memory

Nano-optomechanical Static Random Access Memory (SRAM)

Guiding the Growth of a Conductive Filament by Nanoindentation to Improve Resistive Switching

Direct observation of resistive switching memories behavior from nc-Si embedded in SiO 2 at room temperature

Forming-free Performance of A-Sin X :H-Based Resistive Switching Memory Obtained by Oxygen Plasma Treatment

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

A Nanoscale Nonvolatile Memory Device Made from Rbag4i5 Solid Electrolyte Grown on A Si Substrate

a-SiN x :H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths