Solution-Processable Benzothiazole-Substituted Formazanate Zinc(II) Complex Designed for Robust Resistive Memory Device

Sunita Birara,Shalu Saini,Moumita Majumder,Shree Prakash Tiwari,Ramesh K. Metre
DOI: https://doi.org/10.1039/d4dt01640h
IF: 4
2024-08-24
Dalton Transactions
Abstract:A novel mononuclear bis(formazanate) zinc complex (1) based on a redox-active 1-(benzothiazol-2-yl)-5-(2-benzoyl-4-chlorophenyl)-3-phenyl formazan ligand has been synthesized and characterized. Complex 1 was prepared by reacting one equivalent of Zn(OCOCH3).2H2O with two equivalents of the corresponding formazan derivative. X-ray crystallography was employed to ascertain the solid-state structure of compound 1, and the analysis revealed a distorted octahedral geometry for the complex where the symmetrical ligands exhibit a preference for coordinating with the zinc center in the 'open' form, generating five-membered chelate rings. Moreover, their cyclic voltammetry analysis reveals that complex 1 exhibit the capacity for electrochemical reduction as well as oxidation, resulting in the formation of radical anionic (L2Zn−) and dianionic (L2Zn2−) states as well as the oxidation state of the 1. Additionally, the developed solution-processable complex 1 was employed as the fundamental building material for resistive switching memory application.The [FTO/ZnIIL2 (1)]/Ag RRAM device demonstrates exceptional resistive memory switching properties, with a substantial ION/IOFF ratio (103), low operational VSET and VRESET (0.9 V and -0.75 V) voltages, excellent endurance stability (100 cycles), and decent retention time (more than 2000 seconds). The findings presented in this study underscore the importance of redox-active formazanate metal complexes for creating promising memory storage devices.
chemistry, inorganic & nuclear
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