Rational design of Ru(II) complex with donor-acceptor-donor structure for organic resistive memory devices

Mengzhu Wang,Nan He,Runze Tang,Feiyang Li,Feng Xu,Jian Zhao,Yi Tong,Qiang Zhao,Shu-Juan Liu
DOI: https://doi.org/10.1039/d3dt00539a
IF: 4
2023-05-07
Dalton Transactions
Abstract:A novel Ru(II) complex with donor-acceptor-donor (D-A-D) ligand was designed and synthesized to prepare the organic memory devices. The fabricated Ru(II) complex-based devices exhibited obvious bipolar resistance switching behavior with low switching voltage (~1.13 V) and large ON/OFF ratio (10 5 ). The dominated switching mechanism can be explained by the distinct charge-transfer states endowed by the interaction between metals and ligands, which is verified by density functional theory (DFT) calculations. Excitingly, the device displays a much lower switching voltage than most of the previously reported metal complex based memory devices due to the intense intramolecular charge transfer aroused by the strong built-in electric field in D-A systems. This work not only reveals the potential of Ru(II) complex in resistive switching devices, but also provides a new inspiration to manipulate switching voltage at molecular level.
chemistry, inorganic & nuclear
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