Abstract:Research interest in thin-film transistor (TFT)-based flexible electronics for next-generation foldable and rollable displays is increasing, centering on flexible plastic substrates such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide (PI). For flexible electronics using plastic substrates, it is important to select suitable semiconductor materials that can be deposited at low substrate temperature. Metal oxide (MO) semiconductors such as indium-gallium-zinc oxide (IGZO), zinc oxide (ZnO) are attracting attention as suitable candidates for plastic substrate electronics because of their higher mobility and optical transmittance than hydrogenated amorphous silicon (a-Si:H). In addition, since it can be processed at a lower temperature than low-temperature polysilicon (LTPS), it can be easily applied to flexible plastic substrates. One of the greatest advantages of MO is that it can be easily fabricated by conventional semiconductor processing methods such as sputtering, atomic laser deposition, and solution processes. Among them, solution-processed deposition method is particularly advantageous in terms of manufacturing efficiency because it does not require a separate vacuum system, and can efficiently utilize raw materials, so the fabrication cost is inexpensive. In particular, spray pyrolysis can guarantee environmental stability, high mobility, and large area production than other solution processes. In this work, we developed the high-performance, flexible a-IGZO/Al 2 O 3 TFTs using spray pyrolysis fabricated on the flexible PI substrate. In a previous study, we developed a method to reduce curling and electrostatic discharge (ESD) damage to PI substrates by using a mixture of carbon nanotubes (CNTs) and graphene oxide (GO) between carrier glass and PI substrate. Therefore, it was possible to mechanically detach the TFTs on PI substrate and handle them easily even after detachment. The spray-pyrolyzed Al 2 O 3 film is one of the high-k dielectric materials, which can lower the operating voltage, so the low-power consumption of the TFT backplane can be realized. The flexible spray-pyrolyzed a-IGZO/Al 2 O 3 TFT exhibits the field-effect mobility (μ FE ) of 9.75 cm 2 V −1 s −1 , threshold voltage (V TH ) of −0.8 V, subthreshold swing (SS) of 0.29 V dec −1 , and on/off current ratio of 6.2 × 10 7 . Even without TFT passivation layer, it shows environmental stability. The TFTs show robust electrical performance even under tensile strain with a bending radius of 1 mm. In addition, it showed stable electrical characteristics even in the repeated bending test of 30,000 cycles under compressive strain with a bending radius of 1 mm. This is due to fewer defects resulting from the smooth interface of the a-IGZO film and the Al 2 O 3 film deposited through spray pyrolysis. Therefore, spray-pyrolyzed a-IGZO/Al 2 O 3 TFT fabricated on PI substrate is a promising candidate for next-generation foldable display application. Figure 1

Flexible Hybrid Single-Crystalline Silicon Nanomembrane Thin-Film Transistor with Organic Polymeric Polystyrene as a Gate Dielectric on a Plastic Substrate

Single-crystalline silicon nanomembrane thin-film transistors with anodized aluminum oxide as a gate dielectric on rigid and flexible substrates

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High-k Nb2O5-Bi2O3-MgO Ceramics As Gate Dielectric on a Plastic Substrate

2D-MoS2/BMN Ceramic Hybrid Structure Flexible TFTs with Tunable Device Properties

Solvent-Free Processable and Photo-Patternable Hybrid Gate Dielectric for Flexible Top-Gate Organic Field-Effect Transistors

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

Flexible Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with Aluminum Oxide Gate Insulator on Polyimide Substrate By Spray Pyrolysis for Foldable Display

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Al2O3/HfO2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors

Preparation and Characteristics of Flexible All-Organic Thin-Film Field-Effect Transistor

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All-Carbon-Nanotube Thin-Film-Transistor Integration

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Preparation and Application of Organic-Inorganic Nanocomposite Materials in Stretched Organic Thin Film Transistors

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

Polymeric Semiconductor in Field-Effect Transistors Utilizing Flexible and High-Surface Area Expanded Poly(tetrafluoroethylene) Membrane Gate Dielectrics

Direct self-assembled monolayers treatment on the polar polymer dielectric towards ultra-flexible organic field-effect transistors

High-performance a-IGZO-based flexible TTFT with stacked dielectric layers via ultrathin high-κ SrTiO3 buffer layer grown on HfO2

High‐Performance Flexible Silicon Nanowire Field Effect Transistors on Plastic Substrates