Abstract:Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.

Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All-Carbon-Nanotube Thin-Film-Transistor Integration

Thin‐Film Transistors: Polyvinyl Alcohol/SiO2 Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration (adv. Electron. Mater. 5/2020)

Intrinsically stretchable all-carbon-nanotube transistors with styrene-ethylene-butylene-styrene as gate dielectrics integrated by photolithography-based process

Transparent Flexible Organic Thin-Film Transistors That Use Printed Single-Walled Carbon Nanotube Electrodes

Stretchable Polymer Dielectrics for Low-Voltage-Driven Field-Effect Transistors

Multilayer Porous Polymer Films for High‐Performance Stretchable Organic Electrochemical Transistors

Hydrogel-based sustainable and stretchable field-effect transistors

Flexible High-Entropy Poly(vinyl Alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor.

Ultralow-voltage All-Carbon Low-Dimensional-material Flexible Transistors Integrated by Room-Temperature Photolithography Incorporated Filtration.

Transparent Nanoscale Polyimide Gate Dielectric for Highly Flexible Electronics

Flexible small-channel thin-film transistors by electrohydrodynamic lithography

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Ultra-high Drivability, High-Mobility, Low-Voltage and High-Integration Intrinsically Stretchable Transistors.

Encapsulate-and-peel: fabricating carbon nanotube CMOS integrated circuits in a flexible ultra-thin plastic film

Preparation and Application of Organic-Inorganic Nanocomposite Materials in Stretched Organic Thin Film Transistors

Facile Approach to Fabricating Stretchable Organic Transistors with Laser-Patterned Ag Nanowire Electrodes

Ultratransparent and Stretchable Graphene Electrodes

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb 2 O 5 -Bi 2 O 3 -MgO Ceramics as Gate Dielectric on a Plastic Substrate.

Printed Carbon Nanotube Thin Film Transistors Based on Perhydropolysilazane-Derived Dielectrics for Low Power Flexible Electronics

Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes

Ultra-Flexible High-K Transparent Integratable Fully-Carbon-Based Capacitor Arrays For Sharp-Switching Transistors