Abstract:Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.

Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

Capacitively Coupled Hybrid Ion Gel and Carbon Nanotube Thin‐Film Transistors for Low Voltage Flexible Logic Circuits

Flexible CMOS Integrated Circuits Based on Carbon Nanotubes with Sub-10 Ns Stage Delays

Flexible Logic Circuits Based on Top-Gate Thin Film Transistors with Printed Semiconductor Carbon Nanotubes and Top Electrodes

Printed Carbon Nanotube Thin Film Transistors Based on Perhydropolysilazane-Derived Dielectrics for Low Power Flexible Electronics

Low-voltage High-Performance Flexible Digital and Analog Circuits Based on Ultrahigh-Purity Semiconducting Carbon Nanotubes

Matched printed carbon nanotube complementary metal-oxide-semiconductor (CMOS) devices for flexible circuits

Intrinsically Flexible All-Carbon-nanotube Electronics Enabled by a Hybrid Organic–inorganic Gate Dielectric

Flexible Cmos-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors

Fully-Printed Flexible Dual-Gate Carbon Nanotube Thin-Film Transistors with Tunable Ambipolar Characteristics for Complementary Logic Circuits.

Flexible Printed Three Dimensional (3D) Integrated Carbon Nanotube Complementary Metal Oxide Semiconductor (CMOS) Thin Film Transistors and Circuits

Fully-Solution-Processed Enhancement-Mode Complementary Metal-Oxide-Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3 -Doped Crosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible Electronics

Flexible Integrated Diode-Transistor Logic (Dtl) Driving Circuits Based On Printed Carbon Nanotube Thin Film Transistors With Low Operation Voltage

Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes

A Carbon Nanotube Non-Volatile Memory Device Using a Photoresist Gate Dielectric

43.1: Invited Paper: Large‐area and High‐performance Printed Carbon Nanotube and Metal Oxide Thin Film Transistors and Their Applications

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Fully transparent solution-processed carbon nanotube thin film transistors on a flexible substrate

Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based on Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.

Flexible Indium‐Tin‐Oxide Homojunction Thin‐Film Transistors with Two In‐Plane Gates on Cellulose‐Nanofiber‐Soaked Papers

Printed flexible thin-film transistors based on different types of modified liquid metal with good mobility