Abstract:The effects of carbon in heavily phosphorus-doped Czochralski (HP-Cz) silicon (Si) substrates, with the concentrations across an order of magnitude from 1016 to 1017 cm−3, on the out-diffusion of phosphorus impurities within n/n+ epitaxial Si (Epi-Si) wafers have been investigated. It is found that the increase in the carbon concentration ([C]) from 1.0 × 1016 to 1.0 × 1017 cm−3 leads to the enhanced phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1100 °C in an N2 or an O2 ambient or to anneal at 1150 °C in an N2 ambient, but hardly affects the phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1150 °C in an O2 ambient. Based on the density functional theory calculations, it is derived that the increase in the [C] from 1.0 × 1016 to 1.0 × 1017 cm−3 in the HP-Cz Si substrate results in a significantly increased thermal equilibrium concentration of self-interstitial silicon (SiI) atoms at 1100 or 1150 °C, which, in turn, leads to the increased concentration of the SiI atoms that out-diffuse from the substrate to the epitaxial layer because the SiI atoms diffuse extremely fast in Si. Such a carbon-induced increase in the concentration of SiI atoms is believed to be responsible for the aforementioned enhanced phosphorus out-diffusion, which is predominantly dictated by the interstitialcy mechanism. In the case of anneal in the O2 ambient at sufficiently high temperatures such as 1150 °C, a large number of excessive SiI atoms injected into the Epi-Si wafer substantially mask the carbon enhancement effect on the phosphorus out-diffusion. Of technological significance, it is deduced that the [C] should be not higher than 1.0 × 1016 cm−3 in the HP-Cz Si wafers as the substrates of n/n+ Epi-Si wafers used for power devices.

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Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectrometry

Effect of Heat Treatment on Carbon in Multicrystalline Silicon

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Synthesis and growth mechanism of SiC/SiO2 nanochains by catalyst-free thermal evaporation method in Ar/CO atmosphere

Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS

Diamond Nanocrystals and Amorphous SiOx Nanowires Formed by Rapid Thermal Annealing of Carbon Film

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Effect of Temperature-Dependent Low Oxygen Partial Pressure Annealing on SiC MOS

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Evolution of secondary defects in arsenic implanted Si

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Effect of carbon on oxygen precipitation in Czochralski silicon for solar cells

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

Influence of vacuum annealing on interface properties of SiC (0001) MOS structures

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Controllable Si oxidation mediated by annealing temperature and atmosphere

Investigation of Sio2-Sic Interface by High-Resolution Transmission Electron Microscope