Abstract:The discovery of ferroelectricity in both pure and doped HfO$_2$-based thin films have revitalized the interest in using ferroelectrics for nanoscale device applications. To take advantage of this silicon-compatible ferroelectric, fundamental questions such as the origin of ferroelectricity and better approach to controlled realization of ferroelectricity at the nanoscale need to be addressed. The emergence of robust polarization in HfO$_2$-based thin films is considered as the cumulative effect of various extrinsic factors such as finite-size effects and surface/interface effects of small grains, compressive stress, dopants, oxygen vacancies, and electric fields. The kinetic effects of phase transitions and their potential impacts on the emergence of ferroelectricity in HfO$_2$ at the nanoscale are not well understood. In this work, we construct the transition paths between different polymorphs of hafnia with density functional theory calculations and variable-cell nudged elastic band technique. We find that the transition barriers depend strongly on the mechanical boundary conditions and the transition from the tetragonal phase to the polar orthorhombic phase is a fast process kinetically under clamping. The effects of growth orientations and epitaxial strains on the relative stability of different phases of HfO$_2$ are investigated. The two orthorhombic phases, polar $Pca2_1$ and non-polar $Pbca$, become thermodynamically stable in (111)-oriented thin films over a wide range of epitaxial strain conditions. This work suggests a potential avenue to better stabilize the ferroelectric phase in HfO$_2$ thin films through substrate orientation engineering.

Enhancement of remnant polarization in ferroelectric HfO 2 thin films induced by mechanical uniaxial tensile strain after crystallization process

Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films

Development of ferroelectricity with crystallographic phase transformation in Hf 0.5 Zr 0.5 O 2 thin films upon initial stimulation of an electric field exceeding the coercive field

The effect of mechanical strains on the ferroelectric and dielectric properties of a model single crystal ? Phase field simulation

Disentangling stress and strain effects in ferroelectric HfO2

Strain-Induced Ferroelectric Phase Transitions in Incipient Ferroelectric Rutile Tio2

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO 2 thin films

Strain Tunability of Dielectric and Ferroelectric Properties in Epitaxial Lead Titanate Thin Films

Strain engineering of ferroelectric negative capacitance in PbZr<sub>(1-<i>x</i>)</sub>Ti<sub><i>x</i></sub>O<sub>3</sub> thin films

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Giant Electrocaloric Effect in Ferroelectric Ultrathin Films at Room Temperature Mediated by Flexoelectric Effect and Work Function

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric films

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

Enhanced Ferroelectric Functionality in Flexible Lead Zirconate Titanate Films with In-Situ Substrate-Clamping Compensation

The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf0.5Zr0.5O2 Thin Films

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Revisiting Properties of Ferroelectric and Multiferroic Thin Films under Tensile Strain from First Principles.