Enhanced performance of solar-blind UV detectors based on Ti3C2Tx/AlGaN heterojunction

Jingzhao Yü,Yuqing Zhang,Liying Wang,Xijia Yang,Yue Yang,Ke Jiang,Wei Lü,Xiaojuan Sun
DOI: https://doi.org/10.1007/s11581-023-05362-8
IF: 2.961
2024-01-03
Ionics
Abstract:AlGaN is an ideal material for fabricating ultraviolet (UV) photodetectors targeting the solar-blind wavelength range. However, the performance of UV detectors based on AlGaN is still limited by its material quality and effective p-type doping. Herein, we propose an external modulation method by combining AlGaN with two-dimensional MXene (Ti3C2Tx) to construct Ti3C2Tx/AlGaN heterostructures. It has been shown that Ti3C2Tx undergoes a transition from a metallic material to a semiconductor depending on oxidation, and the performance of Ti3C2Tx/AlGaN detectors could be adjusted accordingly. The effect of oxidation process of Ti3C2Tx on performance of Ti3C2Tx/AlGaN photodetectors has been investigated systematically. The optimized devices exhibited a rise time of 72 ms and a decay time 30 ms, achieving a responsivity of 3000 mA/W under 270 nm UV light irradiation.
chemistry, physical,physics, condensed matter,electrochemistry
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