Preparation method of molybdenum disulfide thin film and molybdenum disulfide thin film

朱德亮,刘新科,贾芳,吕有明,曹培江,曾玉祥,柳文军,韩舜,何佳铸
2015-06-01
Abstract:The invention discloses a preparation method of a molybdenum disulfide thin film and the molybdenum disulfide thin film. A chemical vapor deposition method (CVD) is used for directly growing a large-area high-voltage low-defect molybdenum sulfide (MoS2) thin film on a silicon substrate plated with an oxide buffer layer, and rapid transferring of the MoS2 thin film can be creatively achieved.
Engineering,Materials Science
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