Direct Growth of Molybdenum Disulfide on Arbitrary Insulating Surfaces by Chemical Vapor Deposition

Jiao Wang,Linfeng Chen,Wenjing Lu,Mengqi Zeng,Lifang Tan,Feng Ren,Changzhong Jiang,Lei Fu

DOI: https://doi.org/10.1039/c4ra10644j

IF: 4.036

2015-01-01

RSC Advances

Abstract:Direct growth of large area, uniform and patternable few-layer molybdenum disulfide is achieved on arbitrary insulating substrates by CVD.

What problem does this paper attempt to address?

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Jianyi Chen,Xiaoxu Zhao,Sherman Jun Rong Tan,Hai Xu,Bo Wu,Bo Liu,Deyi Fu,Wei Fu,Dechao Geng,Yanpeng Liu,Wei Liu,Wei Tang,Linjun Li,Wu Zhou,Tze Chien Sum,Kian Ping Loh

DOI: https://doi.org/10.1021/jacs.6b12156

IF: 15

2017-01-01

Journal of the American Chemical Society

Abstract:We report the fast growth of high-quality millimeter-size monolayer MoSe2 crystals on molten glass using an ambient pressure CVD system. We found that the isotropic surface of molten glass suppresses nucleation events and greatly improves the growth of large crystalline domains. Triangular monolayer MoSe2 crystals with sizes reaching 2.5 mm, and with a room-temperature carrier mobility up to 95 cm2(/)(V.s), can be synthesized in 5 min. The method can also be used to synthesize millimeter-size monolayer MoS2 crystals. Our results demonstrate that "liquid-state" glass is a highly promising substrate for the low-cost growth of high-quality large-size 2D transition metal dichalcogenides (TMDs).
Direct liquid injection pulsed-pressure CVD of large area MoS2 on Si/SiO2

Vincent Astié,Felipe Wasem-Klein,Houssin Makhlouf,Matthieu Paillet,Jean-Roch Huntzinger,Jean-Louis Sauvajol,Ahmed-Azmi Zahab,Sandrine Juillaguet,Sylvie Contreras,Damien Voiry,Périne Landois,Jean-Manuel Decams

DOI: https://doi.org/10.1039/d4cp00603h

IF: 3.3

2024-09-26

Physical Chemistry Chemical Physics

Abstract:Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thicknesses is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS 2 ) on Si/SiO 2 substrates by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD) using low-toxicity precursors. It is shown that control of the deposited thickness can be achieved by carefully tuning the amount of molybdenum precursor evaporated and that continuous layers are routinely obtained. Homogeneity and reproducibility have also been examined, as well as the average size of the grains. When targeting monolayer thickness, the MoS 2 showed near stoichiometry (Mo/S=1.94-1.95), low roughness and high photoluminescence (PL) quantum yield, equivalent to exfoliated monolayers and CVD MoS 2 grown on the same substrates.

chemistry, physical,physics, atomic, molecular & chemical
Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Yongjie Zhan,Zheng Liu,Sina Najmaei,Pulickel M. Ajayan,Jun Lou

DOI: https://doi.org/10.48550/arXiv.1111.5072

2011-11-22

Materials Science

Abstract:Monolayer Molybdenum disulfide (MoS2), a two-dimensional crystal with a direct bandgap, is a promising candidate for 2D nanoelectronic devices complementing graphene. There have been recent attempts to produce MoS2 layers via chemical and mechanical exfoliation of bulk material. Here we demonstrate the large area growth of MoS2 atomic layers on SiO2 substrates by a scalable chemical vapor deposition (CVD) method. The as-prepared samples can either be readily utilized for further device fabrication or be easily released from SiO2 and transferred to arbitrary substrates. High resolution transmission electron microscopy and Raman spectroscopy on the as grown films of MoS2 indicate that the number of layers range from single layer to a few layers. Our results on the direct growth of MoS2 layers on dielectric leading to facile device fabrication possibilities show the expanding set of useful 2D atomic layers, on the heels of graphene, which can be controllably synthesized and manipulated for many applications.
Edge defect-assisted synthesis of chemical vapor deposited bilayer molybdenum disulfide

Bin Li,Qiankun Ju,Wenting Hong,Qian Cai,Jinxin Lin,Wei Liu

DOI: https://doi.org/10.1016/j.ceramint.2021.07.188

IF: 5.532

2021-11-01

Ceramics International

Abstract:The synthesis of two-dimensional molybdenum disulfide (MoS2) has invoked much research interest in recent years. In this work, chemical vapor deposition (CVD) was employed to grow a novel molybdenum disulfide. The synthesis reaction was operated in an inert gas environment, with the sulfur precursor placed in the upstream zone of a double zone tube furnace, and the molybdenum trioxide (MoO3) precursor placed in a small tube in the downstream zone. A piece of glass was used as the substrate, which was placed beside the small tube. We intentionally built a high concentration of molybdenum precursor above the substrate. The specific morphology hinged highly on the concentration of molybdenum. Abundant molybdenum atoms adsorbed on the edges of the bottom MoS2 and formed defects, which promoted the nucleation of the top layer MoS2 and preferentially grew from the edges. This result provides an innovative method to controllably synthesize novel bilayer molybdenum disulfide by a one-step method of chemical vapor deposition.

materials science, ceramics
Continuous Large Area Monolayered Molybdenum Disulfide Growth Using Atmospheric Pressure Chemical Vapor Deposition

Rakesh K. Prasad,Dilip K. Singh

DOI: https://doi.org/10.1021/acsomega.2c07408

IF: 4.1

2023-04-04

ACS Omega

Abstract:The growth of large crystallite continuous monolayer materials like molybdenum disulfide (MoS(2)) with the desired morphology via chemical vapor deposition (CVD) remains a challenge. In CVD, the complex interplay of various factors like growth temperatures, precursors, and nature of the substrate decides the crystallinity, crystallite size, and coverage area of the grown MoS(2) monolayer. In the present work, we report about the role of weight fraction of molybdenum trioxide (MoO(3)), sulfur,...

chemistry, multidisciplinary
Chemical Vapor Deposition of Uniform and Large-Domain Molybdenum Disulfide Crystals on Glass/Al2O3 Substrates

Qingguo Gao,Jie Lu,Simin Chen,Lvcheng Chen,Zhequan Xu,Dexi Lin,Songyi Xu,Ping Liu,Xueao Zhang,Weiwei Cai,Chongfu Zhang

DOI: https://doi.org/10.3390/nano12152719

IF: 5.3

2022-08-07

Nanomaterials

Abstract:Two-dimensional molybdenum disulfide (MoS2) has attracted significant attention for next-generation electronics, flexible devices, and optical applications. Chemical vapor deposition is the most promising route for the production of large-scale, high-quality MoS2 films. Recently, the chemical vapor deposition of MoS2 films on soda-lime glass has attracted great attention due to its low cost, fast growth, and large domain size. Typically, a piece of Mo foil or graphite needs to be used as a buffer layer between the glass substrates and the CVD system to prevent the glass substrates from being fragmented. In this study, a novel method was developed for synthesizing MoS2 on glass substrates. Inert Al2O3 was used as the buffer layer and high-quality, uniform, triangular monolayer MoS2 crystals with domain sizes larger than 400 μm were obtained. To demonstrate the advantages of glass/Al2O3 substrates, a direct comparison of CVD MoS2 on glass/Mo and glass/Al2O3 substrates was performed. When Mo foil was used as the buffer layer, serried small bilayer islands and bright core centers could be observed on the MoS2 domains at the center and edges of glass substrates. As a control, uniform MoS2 crystals were obtained when Al2O3 was used as the buffer layer, both at the center and the edge of glass substrates. Raman and PL spectra were further characterized to show the merit of glass/Al2O3 substrates. In addition, the thickness of MoS2 domains was confirmed by an atomic force microscope and the uniformity of MoS2 domains was verified by Raman mapping. This work provides a novel method for CVD MoS2 growth on soda-lime glass and is helpful in realizing commercial applications of MoS2.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Dawei Li,Zhiyong Xiao,Sai Mu,Fei Wang,Ying Liu,Jingfeng Song,Xi Huang,Lijia Jiang,Jun Xiao,Lei Liu,Stephen Ducharme,Bai Cui,Xia Hong,Lan Jiang,Jean-Francois Silvain,Yongfeng Lu

DOI: https://doi.org/10.1021/acs.nanolett.7b05473

2018-03-14

Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.
Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Pinakapani Tummala,Alessio Lamperti,Mario Alia,Erika Kozma,Luca Giampaolo Nobili,Alessandro Molle

DOI: https://doi.org/10.3390/ma13122786

IF: 3.4

2020-06-20

Materials

Abstract:In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS2 remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS2 from isolated domains to a continuous film because of its high flexibility. Herein, we report on a systematic study of the effects of growth pressure, temperature, time, and vertical height between the molybdenum trioxide (MoO3) source and the substrate during the CVD process that influence the morphology, domain size, and uniformity of thickness with controlled parameters over a large scale. The substrate was pretreated with perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed molecule that promoted the layer growth of MoS2. Further, we characterized the as-grown MoS2 morphologies, layer quality, and physical properties by employing scanning electron microscopy (SEM), Raman spectroscopy, and photoluminescence (PL). Our experimental findings demonstrate the effectiveness and versatility of the CVD approach to synthesize MoS2 for various target applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Deyi Fu,Xiaoxu Zhao,Yu-Yang Zhang,Linjun Li,Hai Xu,A-Rang Jang,Seong In Yoon,Peng Song,Sock Mui Poh,Tianhua Ren,Zijing Ding,Wei Fu,Tae Joo Shin,Hyeon Suk Shin,Sokrates T. Pantelides,Wu Zhou,Kian Ping Loh

DOI: https://doi.org/10.1021/jacs.7b05131

IF: 15

2017-01-01

Journal of the American Chemical Society

Abstract:Atomically thin molybdenum disulfide (MoS2), a direct-band-gap semiconductor, is promising for applications in electronics and optoelectronics, but the scalable synthesis of highly crystalline film remains challenging. Here we report the successful epitaxial growth of a continuous, uniform, highly crystalline monolayer MoS2 film on hexagonal boron nitride (h-BN) by molecular beam epitaxy. Atomic force microscopy and electron microscopy studies reveal that MoS2 grown on h-BN primarily consists of two types of nucleation grains (0 aligned and 60 degrees antialigned domains). By adopting a high growth temperature and ultralow precursor flux, the formation of 60 degrees antialigned grains is largely suppressed. The resulting perfectly aligned grains merge seamlessly into a highly crystalline film. Large-scale monolayer MoS2 film can be grown on a 2 in. h-BN/sapphire wafer, for which surface morphology and Raman mapping confirm good spatial uniformity. Our study represents a significant step in the scalable synthesis of highly crystalline MoS2 films on atomically flat surfaces and paves the way to large-scale applications.
Wafer-Scale and Deterministic Patterned Growth of Monolayer MoS2 via Vapor-Liquid-Solid Method

Shisheng Li,Yung-Chang Lin,Xu-Ying Liu,Zehua Hu,Jing Wu,Hideaki Nakajima,Song Liu,Toshiya Okazaki,Wei Chen,Takeo Minari,Yoshiki Sakuma,Kazuhito Tsukagoshi,Kazu Suenaga,Takaaki Taniguchi,Minoru Osada

DOI: https://doi.org/10.1039/C9NR04612G

2019-07-21

Abstract:Vapor transportation is the core process in growing transition-metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). One inevitable problem is the spatial inhomogeneity of the vapors. The non-stoichiometric supply of transition-metal precursors and chalcogen leads to poor control in products' location, morphology, crystallinity, uniformity and batch to batch reproducibility. While vapor-liquid-solid (VLS) growth involves molten precursors at the growth temperatures higher than their melting points. The liquid sodium molybdate can precipitate solid MoS2 monolayers when saturated with sulfur vapor. Taking advantage of the VLS growth, we achieved three kinds of important achievements: (a) 4-inch-wafer-scale uniform growth of MoS2 flakes on SiO2/Si substrates, (b) 2-inch-wafer-scale growth of continuous MoS2 film with a grain size exceeding 100 um on sapphire substrates, and (c) pattern (site-controlled) growth of MoS2 flakes and film. We clarified that the VLS growth thus pave the new way for the high-efficient, scalable synthesis of two-dimensional TMDC monolayers.

Materials Science,Mesoscale and Nanoscale Physics
High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide

Hao Xue,Guozheng Wu,Bojin Zhao,Di Wang,Xiaoming Wu,Zhanggui Hu

DOI: https://doi.org/10.1021/acsaelm.0c00231

IF: 4.494

2020-06-03

ACS Applied Electronic Materials

Abstract:In situ investigation of chemical vapor deposition (CVD) is of critical importance to understanding growth mechanisms of transition-metal dichalcogenides (TMDs) and to develop technologies for growing high-quality monolayer single crystals. However, the in situ investigation is still a great challenge in practice, because TMD CVD growth is conducted at a high temperature with a reduction environment. In this work, we developed an in situ investigation system for CVD growth and presented real-time observations of monolayer MoS2 deposition on the SiO2/Si substrate. We discovered that monolayer MoS2 should be grown via the vapor-state precursor reaction and crystallized from the prenucleation sites on a substrate, an intermediate-phase MoO2 was essential for the nucleation seeding, but the population density should be controlled, and a high-concentration S vapor promoted the in-plane epitaxial growth of MoS2; hence, it was of great benefit to obtain a high-quality monolayer with a compact shape.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.0c00231.Figure S1. Schematic representation of MoS2 CVD growth in a microfurnace; Figure S2. Sulfurization process of 2D MoO3 flakes with the thickness of 6 nm; Figure S3. Raman characterization of monolayer MoS2 grown via two modes; Figure S4. Characterization of the MoO2 film sulfurized by the high-temperature S vapor; Figure S5. High-quality monolayer MoS2 growth using the microfurnace under in situ observations (PDF)Movie S1. MoO3 sublimation (MPG)Movie S2. In situ observation of MoS2 growth (MPG)Movie S3. In situ observation of MoO2 deposition (MPG)Movie S4. Monolayer MoS2 growth vs MoO2 deposition (MPG)Movie S5. Monolayer MoS2 growth and roughing (MPG)This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Iryna Kandybka,Benjamin Groven,Henry Medina Silva,Stefanie Sergeant,Ankit Nalin Mehta,Serkan Koylan,Yuanyuan Shi,Sreetama Banerjee,Pierre Morin,Annelies Delabie

DOI: https://doi.org/10.1021/acsnano.3c09364

IF: 17.1

2024-01-19

ACS Nano

Abstract:Recently, a step-flow growth mode has been proposed to break the inherent molybdenum disulfide (MoS(2)) crystal domain bimodality and yield a single-crystalline MoS(2) monolayer on commonly employed sapphire substrates. This work reveals an alternative growth mechanism during the metal-organic chemical vapor deposition (MOCVD) of a single-crystalline MoS(2) monolayer through anisotropic 2D crystal growth. During early growth stages, the epitaxial symmetry and commensurability of sapphire...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Synthesis of Large-Area Single- to Few-Layered MoS2 on an Ionic Liquid Surface

Jiawei Shen,Yi He,Cheng Gao,Xiangming Tao,Bo Yang,Miao Wang,Gaoxiang Ye

DOI: https://doi.org/10.1021/acsami.2c22150

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:Large-area fabrication of transition metal dichalcogenides via environmentally friendly and efficient processes has been a long-standing issue in the field of two-dimensional (2D) materials. Here, we report that single- to few-layered MoS2 sheets with an average size of the order of micrometers have been successfully synthesized on an ionic liquid surface by a modified low-pressure chemical vapor deposition (LP-CVD) method without the assistance of catalysts. It is found that the MoS2 sheets grown on the liquid substrate exhibit a complete molecular crystal structure, which is confirmed by transmission electron microscopy (TEM), Raman spectroscopy, and photoluminescence (PL) spectroscopy measurements. The interlayer spacing does not change significantly with the increase of the MoS2 layers, corresponding to a layer-by-layer growth pattern. The growth mechanism of the MoS2 sheets is presented according to the experimental results. The work provides a new and simple method of preparing more molecular crystals on liquid substrates and will contribute to further research in this field.
Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Xu Yang,Shisheng Li,Naoki Ikeda,Akihiro Ohtake,Yoshiki Sakuma

DOI: https://doi.org/10.1016/j.apsusc.2023.157756

IF: 6.7

2023-11-01

Applied Surface Science

Abstract:To bring atomically thin transition metal dichalcogenides (TMDs) to practical application, a highly reproducible process to grow them over a large scale is indispensable. Here, we develop a carbon-free reproducible route for the scalable growth of high-quality monolayer MoS2 by selecting molybdenum dichloride dioxide (MoO2Cl2) as the Mo source and integrating the precursor with a standard low-pressure cold-wall metalorganic chemical vapor deposition (MOCVD) system. Specifically, combined with H2S as the sulfur source and using catalytic Dragontrail glass (DT-glass) as the main substrate, we investigate the effect of MoO2Cl2 flux, temperature, and deposition time on the growth, confirming MoO2Cl2 with reasonably high vapor pressure is well compatible with the MOCVD system that enables precise control of sources for uniform nucleation and growth of MoS2 over a large area. We successfully demonstrate the growth of carbon-free MoS2 monolayers on DT-glass with decent crystalline, optical, and electrical properties. Additionally, the initial attempts also manifest that the proposed strategy could be generalized for growing ultrathin MoS2 on other technologically important substrates, such as SiO2/Si and quartz, exhibiting superior optical quality and wafer-scale uniformity. This work provides a new avenue for the large-scale production of high-quality MoS2 monolayers and facilitates their use in practical applications.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Masihhur R. Laskar,Lu Ma,ShanthaKumar K,Pil Sung Park,Sriram Krishnamoorthy,Digbijoy N. Nath,Wu Lu,Yiying Wu,Siddharth Rajan

DOI: https://doi.org/10.48550/arXiv.1302.3177

2013-02-13

Materials Science

Abstract:Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) orientated sapphire yielded highly oriented single crystal MoS2 films for the first time. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures.
Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Sina Najmaei,Zheng Liu,Wu Zhou,Xiaolong Zou,Gang Shi,Sidong Lei,Boris I. Yakobson,Juan-Carlos Idrobo,Pulickel M. Ajayan,Jun Lou

DOI: https://doi.org/10.1038/nmat3673

2013-01-14

Abstract:Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

Materials Science
Optimization of growth parameters to obtain epitaxial large area growth of molybdenum disulfide using pulsed laser deposition

Dhanvini Gudi,Payel Sen,Andres Alejandro Forero Pico,Dipanjan Nandi,Manisha Gupta

DOI: https://doi.org/10.1063/5.0098045

IF: 1.697

2022-06-24

AIP Advances

Abstract:AIP Advances, Volume 12, Issue 6, June 2022. 2D transition metal dichalcogenides (TMDCs) are promising materials for device applications owing to their electronic, optical, and material properties varying with the number of monolayers. Synthesis of large area crystalline TMDC thin films is still challenging with techniques such as exfoliation and chemical vapor growth owing to the uncontrollability of deposition area and high temperature growths with toxic precursors, respectively. Pulsed laser deposition (PLD) is a technique that can overcome these challenges owing to stoichiometric layer by layer growth control by optimizing the growth parameters. In this study, we optimize parameters such as temperature, post-growth annealing, inert gas pressure, and substrate–target distance during PLD growth of MoS2 to obtain uniform and highly crystalline thin films on an ∼1 in.2 substrate. The optimized growth conditions are 800 °C with a 30 min post-growth annealing at a laser fluence of 2.2 J/cm2 with a substrate–target distance of 5 cm and 0.5 mTorr of argon partial pressure. An RMS roughness of 0.17 nm was obtained for 3 nm (4 monolayers) thick MoS2 films with a thin film conductivity of ∼4000 S/m.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Xu Yang,Shisheng Li,Naoki Ikeda,Akihiro Ohtake,Yoshiki Sakuma

DOI: https://doi.org/10.2139/ssrn.4423021

IF: 6.7

2023-06-14

Applied Surface Science

Abstract:To bring atomically thin transition metal dichalcogenides (TMDs) to practical application, a highly reproducible process to grow them over a large scale is indispensable. Here, we develop a carbon-free reproducible route for the scalable growth of high-quality monolayer MoS 2 by selecting molybdenum dichloride dioxide (MoO 2 Cl 2 ) as the Mo source and integrating the precursor with a standard low-pressure cold-wall metalorganic chemical vapor deposition (MOCVD) system. Specifically, combined with H 2 S as the sulfur source and using catalytic Dragontrail glass (DT-glass) as the main substrate, we investigate the effect of MoO 2 Cl 2 flux, temperature, and deposition time on the growth, confirming MoO 2 Cl 2 with reasonably high vapor pressure is well compatible with the MOCVD system that enables precise control of sources for uniform nucleation and growth of MoS 2 over a large area. We successfully demonstrate the growth of carbon-free MoS 2 monolayers on DT-glass with decent crystalline, optical, and electrical properties. Additionally, the initial attempts also manifest that the proposed strategy could be generalized for growing ultrathin MoS 2 on other technologically important substrates, such as SiO 2 /Si and quartz, exhibiting superior optical quality and wafer-scale uniformity. This work provides a new avenue for the large-scale production of high-quality MoS 2 monolayers and facilitates their use in practical applications.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Sachin Shendokar,Frederick Aryeetey,Moha Feroz Hossen,Tetyana Ignatova,Shyam Aravamudhan

DOI: https://doi.org/10.3390/mi14091758

IF: 3.4

2023-09-12

Micromachines

Abstract:Molybdenum disulfide (MoS2) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>1010), immunity to short-channel effects, and unique switching characteristics. MoS2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS2 using the direct vapor phase sulfurization of MoO3. The samples grown on Si/SiO2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS2 layers. The MoS2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS2 suitable for optoelectronic application.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Huanyao Cun,Michal Macha,HoKwon Kim,Ke Liu,Yanfei Zhao,Thomas LaGrange,Andras Kis,Aleksandra Radenovic

DOI: https://doi.org/10.1007/s12274-019-2502-9

IF: 9.9

2019-08-28

Nano Research

Abstract:High-quality and large-scale growth of monolayer molybdenum disulfide (MoS2) has caught intensive attention because of its potential in many applications due to unique electronic properties. Here, we report the wafer-scale growth of high-quality monolayer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposition (MOCVD) method. Prior to growth, an aqueous solution of sodium molybdate (Na2MoO4) is spun onto the substrates as the molybdenum precursor and diethyl sulfide ((C2H5)2S) is used as the sulfur precursor during the growth. The grown MoS2 films exhibit crystallinity, good electrical performance (electron mobility of 22 cm2·V-1·s-1) and structural continuity maintained over the entire wafer. The sapphire substrates are reusable for subsequent growth. The same method is applied for the synthesis of tungsten disulfide (WS2). Our work provides a facile, reproducible and cost-efficient method for the scalable fabrication of high-quality monolayer MoS2 for versatile applications, such as electronic and optoelectronic devices as well as the membranes for desalination and power generation.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology

Direct Growth of Molybdenum Disulfide on Arbitrary Insulating Surfaces by Chemical Vapor Deposition

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Direct liquid injection pulsed-pressure CVD of large area MoS2 on Si/SiO2

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Edge defect-assisted synthesis of chemical vapor deposited bilayer molybdenum disulfide

Continuous Large Area Monolayered Molybdenum Disulfide Growth Using Atmospheric Pressure Chemical Vapor Deposition

Chemical Vapor Deposition of Uniform and Large-Domain Molybdenum Disulfide Crystals on Glass/Al2O3 Substrates

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Wafer-Scale and Deterministic Patterned Growth of Monolayer MoS2 via Vapor-Liquid-Solid Method

High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide

Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Synthesis of Large-Area Single- to Few-Layered MoS2 on an Ionic Liquid Surface

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Optimization of growth parameters to obtain epitaxial large area growth of molybdenum disulfide using pulsed laser deposition

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2