Abstract:In situ investigation of chemical vapor deposition (CVD) is of critical importance to understanding growth mechanisms of transition-metal dichalcogenides (TMDs) and to develop technologies for growing high-quality monolayer single crystals. However, the in situ investigation is still a great challenge in practice, because TMD CVD growth is conducted at a high temperature with a reduction environment. In this work, we developed an in situ investigation system for CVD growth and presented real-time observations of monolayer MoS2 deposition on the SiO2/Si substrate. We discovered that monolayer MoS2 should be grown via the vapor-state precursor reaction and crystallized from the prenucleation sites on a substrate, an intermediate-phase MoO2 was essential for the nucleation seeding, but the population density should be controlled, and a high-concentration S vapor promoted the in-plane epitaxial growth of MoS2; hence, it was of great benefit to obtain a high-quality monolayer with a compact shape.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.0c00231.Figure S1. Schematic representation of MoS2 CVD growth in a microfurnace; Figure S2. Sulfurization process of 2D MoO3 flakes with the thickness of 6 nm; Figure S3. Raman characterization of monolayer MoS2 grown via two modes; Figure S4. Characterization of the MoO2 film sulfurized by the high-temperature S vapor; Figure S5. High-quality monolayer MoS2 growth using the microfurnace under in situ observations (PDF)Movie S1. MoO3 sublimation (MPG)Movie S2. In situ observation of MoS2 growth (MPG)Movie S3. In situ observation of MoO2 deposition (MPG)Movie S4. Monolayer MoS2 growth vs MoO2 deposition (MPG)Movie S5. Monolayer MoS2 growth and roughing (MPG)This article has not yet been cited by other publications.

Continuous Large Area Monolayered Molybdenum Disulfide Growth Using Atmospheric Pressure Chemical Vapor Deposition

Kinetics and Parameters of Epitaxial Monolayered Continuous large area Molybdenum disulfide Growth

Substrate Control for Large Area Continuous Films of Monolayer MoS2 by Atmospheric Pressure Chemical Vapor Deposition.

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Growth Mechanism of Continuous Monolayer MoS2 Prepared by Chemical Vapor Deposition

Growth of Monolayer MoS2 Films in a Quasi-Closed Crucible Encapsulated Substrates by Chemical Vapor Deposition

Direct liquid injection pulsed-pressure CVD of large area MoS2 on Si/SiO2

High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide

Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2.

Large-area Synthesis of Monolayer MoSe2 Films on SiO2/Si Substrates by Atmospheric Pressure Chemical Vapor Deposition

Investigation of the Growth Process of Continuous Monolayer MoS2 Films Prepared by Chemical Vapor Deposition

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Large‐area Growth of Monolayer MoS2 by Using Atmospheric‐pressure Chemical Vapor Deposition with Nucleation Controlling Process

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS2 Using MoO3 Thin Film as a Precursor for Coevaporation

Synthesis of Single-Crystalline Molybdenum Disulfide on Molybdenum Films Aided with NaCl Solution Treatment

Controllable Growth Of Monolayer Mos2 By Chemical Vapor Deposition Via Close Moo2 Precursor For Electrical And Optical Applications

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Uniform vapor pressure based CVD growth of MoS2 using MoO3 thin film as a precursor for co-evaporation