Abstract:Two-dimensional (2D) materials are a new material system with interesting and extraordinary physical properties. These characteristics make them have many applications including field-effect transistor (FET), flexible electronics, and optoelectronic devices [ 1,2,3 ]. Transition Metal Dichalcogenides (TMDs), such as MoS2 and WSe2, are drawn much attentions, because they have direct bandgap if they are monolayer. Acquisition of large area MoS2 flakes using chemical vapor deposition (CVD) method is feasible. Here, we report a method to optimize the uniformity and the size of MoS2 few-layered films. The growth substrates were placed up-side down on the MoO3 source with the separation (d) of 7 to 9 mm during the growth (figure 1a). The resulting films were significantly different (figures 1b-d). Based on the results, the MoS2 films grown when the separation is 8mm have the best uniformity and largest area (figure 1c). The MoS2 films are as large as 1 cm2, which is 3-3.5 times larger than that grown from other separation parameters. The number of MoS2 films was identified to be monolayer from Raman analysis (E1 2g to A1g peak difference is about 20.5 cm-1) and photoluminescence analysis (a peak at ~677 nm). The detailed growth mechanism of large area MoS2 films is discussed in this study. References Yin, ZY et al, ACS NANO., 6, 74-80 (2012). Tsai, ML et al, ACS NANO., 8, 8317-8322 (2014). Lopez-Sanchez, O et al, Nature Nanotechnology., 8, 497-501 (2013) Figure 1

A Simple Way To Grow Large-Area Single-Layer Mos2 Film By Chemical Vapor Deposition

A simple way to grow large-area single-layer MoS<inf>2</inf> film by chemical vapor deposition

Controllable Growth of Monolayer MoS2by Chemical Vapor Deposition Via Close MoO2precursor for Electrical and Optical Applications

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Direct Growth of Continuous and Uniform MoS2 Film on SiO2/Si Substrate Catalyzed by Sodium Sulfate.

Effect of MoO3 Vapor Flow to Large Area MoS2 Few-Layered Films Growth

Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application

Space-confined CVD Growth of 2D-Mos2 Crystals with Tunable Dimensionality Via Adjusting Growth Conditions

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Continuous Large Area Monolayered Molybdenum Disulfide Growth Using Atmospheric Pressure Chemical Vapor Deposition

Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Highly Efficient Deposition of Centimeter-Scale MoS2 Monolayer Film on Dragontrail Glass with Large Single-Crystalline Domains

Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2.

Liquid-phase catalyst pre-seeding for controlled growth of layered MoS2 films over a large area via chemical vapor deposition

Growth of wafer-scale MoS2 monolayer by magnetron sputtering.