A simple way to grow large-area single-layer MoS<inf>2</inf> film by chemical vapor deposition

Yan-Cong Qiao,Zhen Yang,Hai-Ming Zhao,Xue-Feng Wang,Lu-Qi Tao,Yi Yang,Tian-Ling Ren

DOI: https://doi.org/10.1109/EDTM.2017.7947541

2017-01-01

Abstract:We demonstrate a simple way to grow continuous and single-layer MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> film by LPCVD (Low Pressure Chemical Vapor Deposition) in centimeter scale. The as-grown MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films are characterized by optical microscopy (OM), scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) spectroscopy, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The layer number of MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> can be controlled by changing the amount of MoO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and S.