Abstract:In this study, we present the growth of monolayer MoS 2 (molybdenum disulfide) film. Mo (molybdenum) film was formed on a sapphire substrate through e-beam evaporation, and triangular MoS 2 film was grown by direct sulfurization. First, the growth of MoS 2 was observed under an optical microscope. The number of MoS 2 layers was analyzed by Raman spectrum, atomic force microscope (AFM), and photoluminescence spectroscopy (PL) measurement. Different sapphire substrate regions have different growth conditions of MoS 2 . The growth of MoS 2 is optimized by controlling the amount and location of precursors, adjusting the appropriate growing temperature and time, and establishing proper ventilation. Experimental results show the successful growth of a large-area single-layer MoS 2 on a sapphire substrate through direct sulfurization under a suitable environment. The thickness of the MoS 2 film determined by AFM measurement is about 0.73 nm. The peak difference between the Raman measurement shift of 386 and 405 cm −1 is 19.1 cm −1 , and the peak of PL measurement is about 677 nm, which is converted into energy of 1.83 eV, which is the size of the direct energy gap of the MoS 2 thin film. The results verify the distribution of the number of grown layers. Based on the observation of the optical microscope (OM) images, MoS 2 continuously grows from a single layer of discretely distributed triangular single-crystal grains into a single-layer large-area MoS 2 film. This work provides a reference for growing MoS 2 in a large area. We expect to apply this structure to various heterojunctions, sensors, solar cells, and thin-film transistors.

A simple way to grow large-area single-layer MoS<inf>2</inf> film by chemical vapor deposition

A Simple Way To Grow Large-Area Single-Layer Mos2 Film By Chemical Vapor Deposition

Growth of Large-Area Atomically Thin MoS 2 Film Via Ambient Pressure Chemical Vapor Deposition

Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application

Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS2 Film with Spatial Homogeneity and the Visualization of Grain Boundaries

Growth Mechanism of Continuous Monolayer MoS2 Prepared by Chemical Vapor Deposition

Investigation of the Growth Process of Continuous Monolayer MoS2 Films Prepared by Chemical Vapor Deposition

Direct Growth of Continuous and Uniform MoS2 Film on SiO2/Si Substrate Catalyzed by Sodium Sulfate.

Effect of MoO3 Vapor Flow to Large Area MoS2 Few-Layered Films Growth

Substrate Control for Large Area Continuous Films of Monolayer MoS2 by Atmospheric Pressure Chemical Vapor Deposition.

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Reaction Mechanism Transformation of LPCVD-grown MoS2 from Isolated Triangular Grains to Continuous Films

Large area MoS2 thin film growth by direct sulfurization

Controlled Growth Of High Spatial Uniformity Of Monolayer Single Crystal Mos2

Controllable Growth Of Monolayer Mos2 By Chemical Vapor Deposition Via Close Moo2 Precursor For Electrical And Optical Applications

Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Synthesis of Large-Area Uniform MoS2 Films by Substrate-Moving Atmospheric Pressure Chemical Vapor Deposition: from Monolayer to Multilayer

Synthesis of Single-Crystalline Molybdenum Disulfide on Molybdenum Films Aided with NaCl Solution Treatment