Abstract:Molybdenum disulfide (MoS2) transistors are a promising alternative for the semiconductor industry due to their large on/off current ratio (>1010), immunity to short-channel effects, and unique switching characteristics. MoS2 has drawn considerable interest due to its intriguing electrical, optical, sensing, and catalytic properties. Monolayer MoS2 is a semiconducting material with a direct band gap of ~1.9 eV, which can be tuned. Commercially, the aim of synthesizing a novel material is to grow high-quality samples over a large area and at a low cost. Although chemical vapor deposition (CVD) growth techniques are associated with a low-cost pathway and large-area material growth, a drawback concerns meeting the high crystalline quality required for nanoelectronic and optoelectronic applications. This research presents a lower-temperature CVD for the repeatable synthesis of large-size mono- or few-layer MoS2 using the direct vapor phase sulfurization of MoO3. The samples grown on Si/SiO2 substrates demonstrate a uniform single-crystalline quality in Raman spectroscopy, photoluminescence (PL), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning transmission electron microscopy. These characterization techniques were targeted to confirm the uniform thickness, stoichiometry, and lattice spacing of the MoS2 layers. The MoS2 crystals were deposited over the entire surface of the sample substrate. With a detailed discussion of the CVD setup and an explanation of the process parameters that influence nucleation and growth, this work opens a new platform for the repeatable synthesis of highly crystalline mono- or few-layer MoS2 suitable for optoelectronic application.

Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering

Growth of wafer-scale MoS2 monolayer by magnetron sputtering.

Direct Growth of Continuous and Uniform MoS2 Film on SiO2/Si Substrate Catalyzed by Sodium Sulfate.

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Controllable Growth of Monolayer MoS2by Chemical Vapor Deposition Via Close MoO2precursor for Electrical and Optical Applications

A Simple Way To Grow Large-Area Single-Layer Mos2 Film By Chemical Vapor Deposition

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

A simple way to grow large-area single-layer MoS<inf>2</inf> film by chemical vapor deposition

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Effect of MoO3 Vapor Flow to Large Area MoS2 Few-Layered Films Growth

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Monolayer MoS<sub>2</sub> of high mobility grown on SiO<sub>2</sub> substrate by two-step chemical vapor deposition

Liquid-phase catalyst pre-seeding for controlled growth of layered MoS2 films over a large area via chemical vapor deposition

Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application

Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2.

Kinetics and Parameters of Epitaxial Monolayered Continuous large area Molybdenum disulfide Growth

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control