Adriana Simancas,Justus Braach,Eric Buschmann,Ankur Chauhan,Dominik Dannheim,Manuel Del Rio Viera,Katharina Dort,Doris Eckstein,Finn Feindt,Ingrid-Maria Gregor,Karsten Hansen,Lennart Huth,Larissa Mendes,Budi Mulyanto,Daniil Rastorguev,Christian Reckleben,Sara Ruiz Daza,Judith Schlaadt,Paul Schütze,Walter Snoeys,Simon Spannagel,Marcel Stanitzki,Anastasiia Velyka,Gianpiero Vignola,Håkan Wennlöf

Abstract:Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach.

Electrical/piezoresistive effects in bent Alpide MAPS

Electrical/piezoresistive effects in bent Alpide MAPS

Characterization results of MAPS digital prototypes for the ALICE ITS3

Simulation and Fabrication of SiO2-based Piezoresistive Microbridges for Chem/biosensors

Characterisation of analogue MAPS fabricated in 65 nm technology for the ALICE ITS3

First demonstration of in-beam performance of bent Monolithic Active Pixel Sensors

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology

ALICE ITS 3: the first truly cylindrical inner tracker

Characterisation of analogue MAPS produced in the 65 nm TPSCo process

The research of piezoresistive effect in different temperature based on AlGaN/GaN HEFT-micro-accelerometer

ALICE ITS3: how to integrate a large dimension MAPS sensor in a bent configuration detector

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners

First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process

Simulation and first characterization of MAPS test structures with gain for timing applications

ALICE ITS3: a bent stitched MAPS-based vertex detector

Applications of CMOS technology at the ALICE experiment