Abstract:The utilization of RF-MEMS, which stands for Microsystem-based (MEMS) Radio Frequency (RF) passive components, is garnering growing attention within the realm of Beyond-5G (B5G) and 6G technologies, despite its longstanding existence. This trend is fueled by the impressive RF characteristics achievable through the judicious exploitation of this technology. However, the complex interplay of various physical phenomena in RF-MEMS, spanning mechanical, electrical, and electromagnetic domains, renders the design and optimization of new configurations challenging. In this study, a modeling approach based on Lumped Element Networks (LEN) is employed to accurately predict the Scattering Parameters (S-parameters) characteristics of multi-state and highly reconfigurable RF-MEMS devices. The device under scrutiny is a multi-state RF step power attenuator, previously fabricated, tested, and documented in literature by the principal author. Although these physical devices exhibit flat attenuation characteristics, they are subject to certain non-idealities inherent to the technology. The refined LEN-based methodology presented herein aims to interpret and incorporate such undesirable parasitic effects to provide precise predictions for real RF-MEMS devices. Two custom metrics, referred to as Percent Magnitude Difference (PMD) and Percent Phase Difference (PPD), are utilized to evaluate the accuracy of the LEN model, revealing differences consistently within 1 and 8%, respectively, across a frequency range spanning from 100 MHz to 13.5 GHz.

A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package

Wideband lumped element model for on-chip (a)symmetrical coupled interconnects on lossy silicon substrate

FDTD modeling of 3D metal-LTCC structures for RF(MM)ICs

Wideband Description of the Finite-Ground Coplanar Waveguide-Type Structures with Discontinuities

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Parallel Simulation of Electromagnetic and Thermal Characteristic in RF Component

Finite Element Simulation of Electromagnetic Properties of Ferrite Material

Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems

Advanced Parallel Algorithm for System-Level EMC Modeling of High-Speed Electronic Package

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

Simple and fast modelling of radio frequency passives in view of beyond-5G and 6G applications: case study of an RF-MEMS multi-state network described by an equivalent lumped element network

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

Modeling of Integrated EMI Filter with Flexible Multi-Layer (FML) Foils

A Study of Advanced Modeling Methodology of CMOS-compatible RF-MEMS Devices for Integrated Circuit Design

Automatic And Scalable Parametric Modeling For 1-100ghz Transmission Line

A Novel Wafer Level Package Strategy For Rf Mems

Scalable Modeling For The Coplanar Waveguide Step Discontinuity At Frequency Up To 150 Ghz

Scalable Modeling for the CPW Gap Discontinuity at Frequency Up to 150 GHz

Multistage Modeling and Space Mapping for Automated Microwave Filter Design

Parametric Modeling of Coupled Stripline Coupler with Arbitrary Operating Frequency and Coupling Coefficient in Silicon-Based 3D RF Integration

Fast Electromagnetic Modeling of 3d Interconnects on Chip-Package-Board