Current advances in solar-blind photodetection technology: using Ga 2 O 3 and AlGaN

Urvashi Varshney,Neha Aggarwal,Govind Gupta

DOI: https://doi.org/10.1039/d1tc05101f

IF: 6.4

2022-01-01

Journal of Materials Chemistry C

Abstract:Recent advancements and applications of solar-blind ultraviolet photodetectors utilizing Ga 2 O 3 and AlGaN materials.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors

Lixia Wang,Shengming Xu,Jiangang Yang,Hui Huang,Zhe Huo,Jing Li,Xin Xu,Feng Ren,Yunbin He,Yaping Ma,Weifeng Zhang,Xudong Xiao

DOI: https://doi.org/10.1021/acsomega.4c02897

IF: 4.1

2024-06-25

ACS Omega

Abstract:Ultrawide bandgap (UWBG) semiconductors, including Ga(2)O(3), diamond, Al (x) Ga(1-x) N/AlN, featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet photodetection, with applications spanning in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over recent decades, substantial strides in synthesizing high-quality UWBG semiconductors have facilitated the development of diverse high-performance solar-blind...

chemistry, multidisciplinary
Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Qing Cai,Haifan You,Hui Guo,Jin Wang,Bin Liu,Zili Xie,Dunjun Chen,Hai Lu,Youdou Zheng,Rong Zhang

DOI: https://doi.org/10.1038/s41377-021-00527-4

2021-04-30

Light: Science and Applications

Abstract:Abstract Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal–semiconductor–metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions.
Gallium Oxide-Based Solar-Blind Ultraviolet Photodetectors

Xuanhu Chen,Fang-Fang Ren,Jiandong Ye,Shulin Gu

DOI: https://doi.org/10.1088/1361-6641/ab6102

IF: 2.048

2020-01-01

Semiconductor Science and Technology

Abstract:Gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconducting material as a key building block for the applications of power electronics, solar blind photodetectors and deep ultraviolet optoelectronics beyond existing technologies. To date, solar-blind photodetectors based on Ga2O3 in the various forms of bulk crystals, epitaxial thin films, nanostructures, and heterostructures have been demonstrated with either high performance or multiple functionalities, however, several remaining challenges require proper solutions for practical applications. In this topic review, we summarized recent advances in processing and device performance of solar photodetectors based on Ga2O3 and the associated physical mechanisms behind according to the architecture of photodetectors. The feasibility of p-type doping, the defect behavior, and radiation effects on the device performance have been discussed. The demonstration of novel and advanced architectures such as phototransistors, highly narrow-band photodetectors, photodetector arrays, and integrated NEMS resonance oscillators for real-time ultraviolet light detection are included. This review may provide better understanding on the optoelectronics properties of the Ga2O3 emerging material to fully exploit its promising optoelectronic applications in deep ultraviolet spectral region.
Author Correction: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Qing Cai,Haifan You,Hui Guo,Jin Wang,Bin Liu,Zili Xie,Dunjun Chen,Hai Lu,Youdou Zheng,Rong Zhang

DOI: https://doi.org/10.1038/s41377-021-00690-8

2021-01-01

Abstract:Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal-semiconductor-metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions. Summarizing recent advances in the processing and properties of AlGaN-based solar-blind UV PDs and FPAs as well as AlGaN growth and doping techniques.
Research Progress in Solar-Blind UV Detectors Based on Wide-Band Semiconductor Ga2O3

Leyun Shen,Tao Zhang,Yunze Liu,Huishan Wu,Fengzhi Wang,Xinhua Pan,Zhizhen Ye

DOI: https://doi.org/10.11868/j.issn.1001-4381.2021.001100

2023-01-01

Abstract:Ga2O3 is an ultra-wide band semiconductor corresponding to the deep ultraviolet(UV) spectrum, which can be used to prepare solar-blind UV detectors. The solar-blind ultraviolet detectors are widely used in military and aerospace fields dueto strong anti-interference ability, high detection sensitivity and low background noise.The basic properties of Ga2O3 materials, including different crystal structures and their preparation, and the recent progress in solar-blind UV detectors based on Ga2O3 were introduced in this paper. Among them, metal-semiconductor-metal (MSM) structure of Ga2O3 devices are the most common, which are expected to achieve business application with commercial parameters. The Ga2O3-based heterostructure and Schottky detectors also exhibit excellent performance and self-supply characteristics. In addition, Ga2O3 devices based on thin film transistor become a potential solar-blind ultraviolet detector. They combine the working mechanism of MSM and transistor structure to obtain high light gain, which are suitable for weak signal detection.
Review of Gallium-Oxide-based Solar-Blind Ultraviolet Photodetectors

Xuanhu Chen,Fangfang Ren,Shulin Gu,Jiandong Ye

DOI: https://doi.org/10.1364/prj.7.000381

IF: 7.6

2019-01-01

Photonics Research

Abstract:Solar-blind photodetectors are of great interest to a wide range of industrial, civil, environmental, and biological applications. As one of the emerging ultrawide-bandgap semiconductors, gallium oxide (Ga2O3) exhibits unique advantages over other wide-bandgap semiconductors, especially in developing high-performance solar-blind photodetectors. This paper comprehensively reviews the latest progresses of solar-blind photodetectors based on Ga2O3 materials in various forms of bulk single crystal, epitaxial films, nanostructures, and their ternary alloys. The basic working principles of photodetectors and the fundamental properties and synthesis of Ga2O3, as well as device processing developments, have been briefly summarized. A special focus is to address the physical mechanism for commonly observed huge photoconductive gains. Benefitting from the rapid development in material epitaxy and device processes, Ga2O3-based solar-blind detectors represent to date one of the most prospective solutions for UV detection technology towards versatile applications.
Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids

Antoni Rogalski,Zbigniew Bielecki,Janusz Mikołajczyk,Jacek Wojtas

DOI: https://doi.org/10.3390/s23094452

2023-05-02

Abstract:The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.
Excellent Wavelength Selectivity of p-AlGaN/n-Ga 2 O 3 Solar-Blind UVC PD

Xiyao He,Ruoting Sun,Xiangyu Xu,Hansong Geng,Shengli Qi,Kelvin Hongliang Zhang,Hao Long

DOI: https://doi.org/10.1021/acsami.4c12680

IF: 9.5

2024-11-18

ACS Applied Materials & Interfaces

Abstract:Due to the advantages of ultrawide bandgap, chemical stability, self-powered, and low cost, gallium oxide (Ga(2)O(3)) based photodetectors (PDs) are considered as one of the most promising solar-blind ultraviolet PDs, having garnered significant attention in fields such as missile warning and flame arc detection. High selective ratios and excellent responsivity are important to reduce the false alarm rate in solar-blind detection. However, due to the lack of p-type Ga(2)O(3), existing...

materials science, multidisciplinary,nanoscience & nanotechnology
Enlightening gallium nitride-based UV photodetectors

Neha Aggarwal,Govind Gupta

DOI: https://doi.org/10.1039/d0tc03219k

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:This article highlights the emerging demand for gallium nitride (GaN) semiconductor technology that offers superior optoelectronic properties making it suitable for futuristic ultraviolet (UV) photodetection applications.

materials science, multidisciplinary,physics, applied
Research Progress in Solar-blind GaN-based Semiconductor UV Detectors

Yuan Jin

2003-01-01

Abstract:In this review, the current state of the art of different types of GaNbased UV detectors is presented while the history of research and development on nitride semiconductor UV detectors is outlined. The latest progress in development of GaNbased wide gap semiconductor UV detectors is described in detail. 
Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

Xiaohu Hou,Yanni Zou,Mengfan Ding,Yuan Qin,Zhongfang Zhang,Xiaolan Ma,Pengju Tan,Shunjie Yu,Xuanzhe Zhou,Xiaolong Zhao,Guangwei Xu,Haiding Sun,Shibing Lon

DOI: https://doi.org/10.1088/1361-6463/abbb45

2021-01-01

Abstract:Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due to its critical applications, especially in safety and space detection. A DUV photodetector based on wide-bandgap semiconductors provides a subversive scheme to simplify the currently mature DUV detection system. As an ultra-wide-bandgap (4.4-5.3 eV) semiconductor directly corresponding to the DUV solar-blind waveband, Ga2O3 has an important strategic position in the prospective layout of semiconductor technology owing to its intrinsic characteristics of high breakdown electric field, excellent tolerance of high/low temperature, high resistance to radiation, and rich material systems. As the only native substrate that can be fabricated from melt-grown bulk single crystals, beta-Ga2O3 has attracted a lot of attention both in power-electronic and photo-electronic devices. In addition, other metastable phases (e.g. alpha, epsilon, gamma) of Ga2O3 have attracted great interest due to their unique properties. In this work, we discuss the advances in achieving bulk and film Ga2O3 materials with different crystal phases. In addition, the latest achievements with polymorphous Ga2O3-based solar-blind photodetectors (SBPDs) and the methods to enhance their performance, including doping, annealing, and transparent electrodes, are also discussed. Furthermore, as the most desirable application, DUV imaging technologies based on Ga2O3 SBPDs are systematically summarized. Finally, conclusions regarding recent advances in Ga2O3 SBPDs, remaining challenges, and prospects are presented and discussed.
Review of self-powered solar-blind photodetectors based on Ga2O3

Chao Wu,Fengmin Wu,Haizheng Hu,Shunli Wang,Aiping Liu,Daoyou Guo

DOI: https://doi.org/10.1016/j.mtphys.2022.100883

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:Due to the broad potential applications range in both military and civilian domains, solar-blind photodetectors based on the ultrawide-bandgap semiconductor Ga2O3, with high photosensitivity and low false alarm rate, have been widely concerned. With the rapid development of modern society, photodetectors are gradually being modified to exhibit high energy efficiency, miniaturization, and excellent performance. Self-powered photodetectors based on the photovoltaic effect can detect optical signals without an external power source, emerging as a promising candidate for next-generation photodetectors. This review summarizes the state-of-the-art research on self-powered solar-blind photodetectors based on Ga2O3. We classify the currently reported Ga2O3-based self-powered solar-blind photodetectors into Schottky junction (including metal-semiconductor and graphene-semiconductor types), heterojunction (including all-inorganic and inorganic-organic types), phase junction, and photoelectrochemical (PEC). The fundamental properties of Ga2O3, the basic working principles of self-powered photodetectors, and the device processing developments have been summarized. Finally, conclusions regarding recent advances, remaining challenges, and prospects are presented and discussed.
High Performance of Zero-Power-Consumption MOCVD-Grown Β-Ga2o3-based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities.

Hardhyan Sheoran,Shi Fang,Fangzhou Liang,Zhe Huang,Shuchi Kaushik,Nethala Manikanthababu,Xiaolong Zhao,Haiding Sun,Rajendra Singh,Shibing Long

DOI: https://doi.org/10.1021/acsami.2c08511

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:In this article, we report on high-performance deep ultraviolet photodetectors (DUV PDs) fabricated on metal-organic chemical vapor deposition (MOCVD)-grown beta-Ga2O3 heteroepitaxy that exhibit stable operation up to 125 degrees C. The fabricated DUV PDs exhibit self-powered behavior with an ultralow dark current of 1.75 fA and a very high photo-to dark-current ratio (PDCR) of the order of 105 at zero bias and >105 at higher biases of 5 and 10 V, which remains almost constant up to 125 degrees C. The high responsivity of 6.62 A/W is obtained at 10 Vat room temperature (RT) under the weak illumination of 42.86 mu W/cm2 of 260 nm wavelength. The detector shows very low noise equivalent power (NEP) of 5.74 x 10-14 and 1.03 x 10-16 W/Hz1/2 and ultrahigh detectivity of 5.51 x 1011 and 3.10 x 1014 Jones at 0 and 5 V, respectively, which shows its high detection sensitivity. The RT UV-visible (260:500 nm) rejection ratios of the order of 103 at zero bias and 105 at 5 V are obtained. These results demonstrate the potential of Ga2O3-based DUV PDs for solar-blind detection applications that require high-temperature robustness.
Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Jiaxin Zhang,Liqiong Deng,Shihong Xia,Chenyu Guo,Kunzi Liu,Li Chen,Wei Liu,Hui Xiao,Zhenhai Yang,Wei Guo,Jichun Ye

DOI: https://doi.org/10.1088/1361-6641/ad5100

IF: 2.048

2024-05-29

Semiconductor Science and Technology

Abstract:Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

materials science, multidisciplinary,engineering, electrical & electronic,physics, condensed matter
Solar-blind ultraviolet photodetector based on Nb 2 C/β-Ga 2 O 3 heterojunction

Yongfeng Zhang,Shuainan Liu,Ruiliang Xu,Shengping Ruan,Caixia Liu,Yan Ma,Xin Li,Yu Chen,Jingran Zhou

DOI: https://doi.org/10.1088/1361-6528/ad18e7

IF: 3.5

2023-12-27

Nanotechnology

Abstract:Abstract The β-Ga 2 O 3 has been widely investigated for its stability and thermochemical properties. However, the preparation of β-Ga 2 O 3 thin films requires complex growth techniques and high growth temperatures, and this has hindered the application of β-Ga 2 O 3 thin films. In this study, β-Ga 2 O 3 thin films with good crystalline quality were prepared by a green method, and a ultraviolet UV detector based on β-Ga 2 O 3 with a light current of 2.54 × 10 -6 A and a dark current of 1.19 × 10 -8 A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb 2 C and Ga 2 O 3 to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A/W) and good stability. Thus, Nb 2 C/β-Ga 2 O 3 heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Nanolayered Graphene/Hexagonal Boron Nitride/n-AlGaN Heterostructures as Solar-Blind Deep-Ultraviolet Photodetectors

Shang-Cheng Wu,Meng-Jer Wu,Yang-Fang Chen

DOI: https://doi.org/10.1021/acsanm.0c01219

IF: 6.14

2020-07-21

ACS Applied Nano Materials

Abstract:The spectral specificity of deep-ultraviolet (UV) photodetectors makes them useful in many fields, spanning from disinfection of various surfaces and water purification to optical communication. As silicon-based devices show obvious disadvantages as UV devices because of their low band gap, semiconductor materials with a wide band gap exceeding 4 eV serve as excellent alternatives. In this paper, by the integration of the unique properties of each constituent material, we design a nanolayered graphene/insulator/semiconductor (graphene/hBN/n-AlGaN) deep-UV photodetector with high performance. The wide-band gap AlGaN semiconductor enables the detection of deep-UV signals without the requirement of a UV-pass filter and thus acts as a true solar-blind photodetector. In addition, the several nanolayered graphene–hBN heterostructure is utilized to enhance the performance of photodetectors, which successfully solves the strain issue between graphene and the conventional bulk insulators. Besides, the high transparency of graphene can enable incident light to directly excite the active layer with negligible optical loss, and the two-dimensional hBN insulator is beneficial to reduce dark current and assist the quantum tunneling of photogenerated carriers. Interestingly, the photodetectors demonstrated in this work show the highest responsivity and detectivity compared with previously reported AlGaN-based deep-UV photodetectors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.0c01219?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.0c01219</a>.Absorption spectrum and EDS spectra of the AlGaN layer; temperature dependence I–V curves of the devices with bi- and tri-layer hBN; and response and recovery times of the devices with mono-, bi-, and tri-layer hBN (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.0c01219/suppl_file/an0c01219_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application

Hao Chen,Zhe Li,Zeyulin Zhang,Dinghe Liu,Liru Zeng,Yiru Yan,Dazheng Chen,Qian Feng,Jincheng Zhang,Yue Hao,Chunfu Zhang

DOI: https://doi.org/10.1088/1361-6641/ad42cb

IF: 2.048

2024-04-26

Semiconductor Science and Technology

Abstract:Due to the excellent responsivity and high rejection ratio, Ga2O3-based solar-blind ultraviolet photodetectors are attracting more and more attention. The excellent material quality ensures great performance of photodetectors. In this review, we summarize recent advancements in growth methods of β-Ga2O3 bulk and thin films. Based on high-quality substrates and thin films, numerous state-of-art Ga2O3-based photodetectors have been reported in decades. Therefore, we collect some representative achievements in Ga2O3-based photodetectors, summarizing the development process of each type of structure. Furthermore, the advantages and disadvantages of different structures are also discussed to provide practical reference for researchers in this field. Additionally, inspired by the excellent performance of Ga2O3-based photodetectors, many research teams have also explored the applications based on solar-blind detection. We summarize three application fields, including imaging, light communication, and optical tracing, introducing some excellent works from different teams. Finally, we evaluate the outlook and remaining challenges in the future development of Ga2O3-based photodetectors.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Review of deep ultraviolet photodetector based on gallium oxide

Yuan Qin,Shibing Long,Hang Dong,Qiming He,Guangzhong Jian,Ying Zhang,Xiaohu Hou,Pengju Tan,Zhongfang Zhang,Hangbing Lv,Qi Liu,Ming Liu

DOI: https://doi.org/10.1088/1674-1056/28/1/018501

2019-01-01

Chinese Physics B

Abstract:Ultraviolet (UV) photodetectors (PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga2O3 is regarded as the most promising candidate for UV detection. Furthermore, the bandgap of Ga2O3 is as high as 4.7-4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga2O3 to tune its bandgap, compared to AlGaN, MgZnO, etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga2O3 photodetectors based on single crystal or amorphous Ga2O3 are mainly focused on metal-semiconductor-metal and Schottky photodiodes. In this work, the recent achievements of Ga2O3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga2O3 and amorphous Ga2O3 thin film are analyzed and compared. Finally, the prospects of Ga2O3 UV photodetectors are forecast.
Solar-blind UV photodetectors based on α-Ga2O3 prepared by a two-step hydrothermal method

Junjun Xue,Kaicheng Xu,Jiaming Tong,Zhouyu Chen,Haoyu Fang,Saisai Wang,Jin Wang,Ting Zhi

DOI: https://doi.org/10.1007/s11082-024-07174-0

IF: 3

2024-06-27

Optical and Quantum Electronics

Abstract:In this study, α-Ga 2 O 3 nanorod arrays (NRAs) were grown using a simple and low-cost two-step hydrothermal method. Subsequently, a photoelectrochemical ultraviolet photodetector (PEC-UV PD) based on the α-Ga 2 O 3 NRAs was fabricated, which can operate at zero bias and has a performance far superior to that of PEC-UV PDs based on the one-step hydrothermal method. Under 2 mW/cm 2 illumination at 254 nm, the device achieved a responsivity of 26.59 mA/W, an external quantum efficiency of 12.98%, and a rise/decay time of 53 ms/7 ms without external bias. These results demonstrate outstanding detection performance compared to previously reported devices. The superior performance can be attributed to the better crystallinity which provides a larger absorption area for the device, the solution contact area, and a faster channel for carrier transport, the space charge region at the solid/liquid interface which also allows efficient separation of photogenerated carriers. Furthermore, it also benefits from the positive effects of moderate oxygen vacancy (V O ) concentrations for NRAs. The α-Ga 2 O 3 NRAs PEC-UV PD with two-step hydrothermal method is undoubtedly a promising candidate for future solar-blind detection.

engineering, electrical & electronic,optics,quantum science & technology
Solar-Blind Ultraviolet Detection Based on Algan/GaN Heterojunction

Lechen Yang,Kai Fu,Min Xiong,Haijun Li,Wenhua Shi,Baoshun Zhang

DOI: https://doi.org/10.1166/jno.2023.3426

2023-01-01

Journal of Nanoelectronics and Optoelectronics

Abstract:A solar-blind ultraviolet metal-semiconductor-metal photodetector based on dual-color AlGaN/GaN het-erostructure was fabricated and tested. The device showed good photo-response in solar-blind ultraviolet, by employing a single AlGaN/GaN layer. Spectrum responses of the photodetector were investigated by chang-ing the frequency of incident light signals and the bias voltages. The peak response was 0.288 A/W at 260 nm and 0.322 A/W at 366 nm at the bias of 5 V.

Current advances in solar-blind photodetection technology: using Ga 2 O 3 and AlGaN

Recent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Gallium Oxide-Based Solar-Blind Ultraviolet Photodetectors

Author Correction: Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Research Progress in Solar-Blind UV Detectors Based on Wide-Band Semiconductor Ga2O3

Review of Gallium-Oxide-based Solar-Blind Ultraviolet Photodetectors

Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids

Excellent Wavelength Selectivity of p-AlGaN/n-Ga 2 O 3 Solar-Blind UVC PD

Enlightening gallium nitride-based UV photodetectors

Research Progress in Solar-blind GaN-based Semiconductor UV Detectors

Review of polymorphous Ga<sub>2</sub>O<sub>3</sub> materials and their solar-blind photodetector applications

Review of self-powered solar-blind photodetectors based on Ga2O3

High Performance of Zero-Power-Consumption MOCVD-Grown Β-Ga2o3-based Solar-Blind Photodetectors with Ultralow Dark Current and High-Temperature Functionalities.

Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Solar-blind ultraviolet photodetector based on Nb 2 C/β-Ga 2 O 3 heterojunction

Nanolayered Graphene/Hexagonal Boron Nitride/n-AlGaN Heterostructures as Solar-Blind Deep-Ultraviolet Photodetectors

Review of β-Ga2O3 solar-blind ultraviolet photodetector: growth, device, and application

Review of deep ultraviolet photodetector based on gallium oxide

Solar-blind UV photodetectors based on α-Ga2O3 prepared by a two-step hydrothermal method

Solar-Blind Ultraviolet Detection Based on Algan/GaN Heterojunction